Skhynix Inc.

Su-Ho Kim

Jin-Yul Lee

Han-Sang Song

Eun-Jeong Kim

Mi-Ri Lee

Tae-Kyung Oh

Yong-Seok Eun

Tae-Han Kim

Kyong-Bong Rouh

Shang-Koon Na

A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Isolation structure and method for manufacturing the same

Method of manufacturing isolation structure for semiconductor device

Method for manufacturing isolation structure

A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate electrode which is formed in the trench. The gate electrode includes a first electrode buried over a bottom of the trench; a second electrode formed over the first electrode; and a liner electrode having an interface part which is positioned between the first electrode and the second electrode and a side part, which is positioned on sidewalls of the second electrode and overlaps with the source region and the drain region.

Transistor having dual work function buried gate electrode and method for fabricating the same

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

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Gyeonggi-do, South Korea

Su-Ho Kim