Samsung Electronics Co., Ltd.

Su-gon Bae

Ki-Young Kim

Jong-hyon Ahn

Kwan-Jong Roh

Ki-seog Youn

Jae-cheol Yoo

Hyae-ryoung Lee

A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.

Semiconductor integrated circuit device and method of manufacturing the same

A method of fabricating a dual gate oxide of a semiconductor device includes forming a first gate insulation layer over an entire surface of a substrate, removing a portion of the first gate insulation layer to selectively expose a first region of the substrate using a first mask and performing an ion implantation on the selectively exposed first region of the substrate using the first mask, and forming a second gate insulation layer on the first gate insulation layer and the exposed first region of the substrate to form a resultant gate insulation layer having a first thickness over the first region of the substrate and a second thickness over a remaining region of the substrate, the first thickness and the second thickness being different.

Method of fabricating a dual gate oxide

Growing community of inventors

Suwon-si, South Korea

Su-gon Bae