Taiwan Semiconductor Manufacturing Comp. Ltd.

Su-Chun Yang

Chih-Hang Tung

Chen-Hua Douglas Yu

Tung-Liang Shao

Yi-Li Hsiao

Wen-Lin Shih

Da-Yuan Shih

Ching-Hua Hsieh

Chien Ling Hwang

Ying-Jui Huang

Chung-Jung Wu

Hsiao-Yun Chen

Geng-Ming Chang

Jih-Churng Twu

Jiung Wu

A package structure is provided. The package structure includes a first interconnect structure formed over a first substrate. The package structure also includes a second interconnect structure formed below a second substrate. The package structure further includes a bonding structure between the first interconnect structure and the second interconnect structure. In addition, the bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC). The bonding structure also includes an underfill layer surrounding the bonding structure. A width of the first IMC is greater than a width of the second IMC, and the underfill layer covers a sidewall of the first IMC and a sidewall of the second IMC.

Package structure

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Bonding with pre-deoxide process and apparatus for performing the same

A chip package structure is provided. The chip package structure includes a first redistribution layer having a bonding portion. The bonding portion includes a dielectric layer. The chip package structure includes a chip structure bonded to the bonding portion. A first width of the dielectric layer of the bonding portion is substantially equal to a second width of the chip structure. The chip package structure includes a protective layer over the first redistribution layer and surrounding the chip structure. A portion of the protective layer extends into the first redistribution layer and surrounds the bonding portion.

Chip package structure with redistribution layer having bonding portion

A die stacking structure, a semiconductor package and a method for forming the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; and a stack of dielectric layers, extending in between the second device dies, and laterally enclosing each of the second device dies. The dielectric layers are respectively formed of a spin-on-glass (SOG) or a polymer, and a lower one of the dielectric layers has a thickness greater than a thickness of another one of the dielectric layers at a higher level.

Die stacking structure, semiconductor package and formation method of the die stacking structure

A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Semiconductor device, stacked semiconductor device and manufacturing method of semiconductor device

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Bonding method of package components and bonding apparatus

A package structure and method for forming the same are provided. The package structure includes a first interconnect structure formed over a first substrate, and the first interconnect structure includes a first metal layer. The package structure further includes a second interconnect structure formed over a second substrate. The package structure includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC), a portion of the first IMC protrudes from the sidewall surfaces of the second IMC, and there could be a grain boundary between the first IMC and the second IMC.

Package structure and method for forming the same

A method for forming a chip package structure is provided. The method includes partially removing a first redistribution layer to form an alignment trench in the first redistribution layer. The alignment trench surrounds a bonding portion of the first redistribution layer. The method includes forming a liquid layer over the bonding portion. The method includes disposing a chip structure over the liquid layer, wherein a first width of the bonding portion is substantially equal to a second width of the chip structure. The method includes evaporating the liquid layer. The chip structure is in direct contact with the bonding portion after the liquid layer is evaporated.

Chip package structure and method for forming the same

A wafer-level pulling method includes securing a top holder to a plurality of chips. The method further includes securing a bottom holder to a wafer, wherein the plurality of chips are bonded to the wafer by a plurality of solder bumps. The method further includes softening the plurality of solder bumps. The method further includes stretching the plurality of softened solder bumps, wherein stretching the plurality of softened solder bumps comprises leveling the plurality of chips using a plurality of levelling devices separated from the plurality of chips, and a first levelling device of the plurality of levelling devices has a different structure from a second levelling device of the plurality of levelling devices.

Solder bump stretching method

A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

Metal post bonding using pre-fabricated metal posts

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn&#x2014;Bi compound, and the eutectic Sn&#x2014;Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90&#xb0;. The method further includes cooling down the solder bump.

Growing community of inventors

Hsinchu County, Taiwan

Su-Chun Yang