International Business Machines Corporation

Globalfoundries Inc.

Globalfoundries Singapore Pte. Ltd.

Samsung Electronics Co., Ltd.

Stmicroelectronics Gmbh

Su Chen Fan

Ruilong Xie

David V Horak

Andre P Labonte

Lars W Liebmann

Yann Mignot

Sivananda K Kanakasabapathy

Hsueh-Chung Chen

Junli Wang

Heng Wu

Sanjay C Mehta

Tenko Yamashita

Christopher Joseph Waskiewicz

Chih-Chao Yang

Brent A Anderson

Nicolas J Loubet

Shogo Mochizuki

Huimei Zhou

Hemanth Jagannathan

Peng Xu

Injo Ok

Indira P Seshadri

Lawrence Alfred Clevenger

Shom Ponoth

Balasubramanian Pranatharthiharan

Ekmini Anuja De Silva

Kisik Choi

Huai Huang

Kangguo Cheng

Veeraraghavan S Basker

Chanro Park

Julien Frougier

Zuoguang Liu

Steven J Bentley

Jeffrey C Shearer

Takashi Ando

Charles W Koburger, Iii

Terence B Hook

Andrew Mark Greene

Koichi Motoyama

Eric R Miller

Muthumanickam Sankarapandian

Yongan Xu

Johnathan E Faltermeier

James John Kelly

William James Taylor, Jr

Albert M Young

Wei Wang

Tsung-Sheng Kang

Balasubramanian S Pranatharthi Haran

Sukwon Hong

Pranatharthiharan Haran Balasubramanian

Son Van Nguyen

Ruqiang Bao

Jingyun Zhang

Min Gyu Sung

Ravikumar Ramachandran

Robert C Wong

Balasubramanian S Haran

Rajasekhar Venigalla

Cornelius Brown Peethala

Stuart A Sieg

Vimal Kumar Kamineni

Raghuveer Reddy Patlolla

Jay William Strane

Tao Li

Miaomiao Wang

Jing Guo

Ardasheir Rahman

Puneet Harischandra Suvarna

Hari Prasad Amanapu

Sean Lian

Alexander Reznicek

Bruce Bennett Doris

Carl John Radens

Theodorus E Standaert

Xin Miao

Chun-chen Yeh

Oleg Gluschenkov

Dechao Guo

Ajey Poovannummoottil Jacob

Fee Li Lie

Xiuyu Cai

Chi-Chun Liu

Kafai Lai

David Lee Rath

Richard Anthony Conti

Pierre Morin

Cheng Chi

Murat Kerem Akarvardar

Chiahsun Tseng

Gen Tsutsui

Mark V Raymond

Adra Carr

Kisup Chung

Catherine B Labelle

Linus Jang

Gangadhara Raja Muthinti

Victor W C Chan

Jason Cantone

A CMOS (complementary metal-oxide semiconductor) device includes an n-channel metal-oxide semiconductor (NMOS) device, a p-channel metal-oxide semiconductor (PMOS) device, the NMOS and the PMOS device surrounded by a first dielectric material, the NMOS device separated from the PMOS device by a second dielectric material, a first NMOS gate separated from a first PMOS gate by the second dielectric material, a second NMOS gate electrically connected to a second PMOS gate by a metal link disposed between the NMOS gate and the PMOS gate, the metal link disposed above the second dielectric material, a first source/drain (S/D) contact disposed above the second dielectric material, the first S/D contact disposed in contact with both NMOS S/D region and a PMOS S/D region, and a second S/D contact disposed adjacent to the second dielectric material, the second S/D contact disposed in contact with a single S/D region.

Semiconductor device having hybrid middle of line contacts

A semiconductor device comprises a substrate including at least one vertical fin extending from the substrate, a bottom source/drain region beneath the at least one vertical fin, a top source/drain region disposed above the at least one vertical fin, a metal gate structure, a contact coupled to the top source/drain region and first and second contact spacers disposed on each side of the contact.

Vertical field effect transistor with minimal contact to gate erosion

An approach forming semiconductor structure composed of one or more stacked semiconductor devices that include at least a top semiconductor device, a bottom semiconductor device under the top semiconductor, and contacts to each of the semiconductor devices. The approach provides a stacked semiconductor structure where the bottom semiconductor device is wider than the top semiconductor device. The approach also provides the stacked semiconductor structure where the width of the top semiconductor device is the same as the width of the bottom semiconductor device. The approach includes forming a contact to a side of the bottom semiconductor device when the width of the top semiconductor device is the same as the bottom semiconductor device. The approach includes forming a contact to epitaxy grown on a portion of the top and a side of the bottom semiconductor device when the bottom semiconductor device is larger than the top semiconductor device.

Bottom contact with self-aligned spacer for stacked semiconductor devices

A semiconductor device includes a first transistor and a first gate electrically coupled to the first transistor. A second transistor is positioned on top of the first transistor. A second gate is electrically coupled to the second transistor. A dielectric isolation layer is positioned between the first gate and the second gate. A first conductive contact is electrically coupled to the first gate. A second conductive contact is electrically coupled to the second gate. A control of the first gate through the first conductive contact is independent of a control of the second gate through the second conductive contact.

Stacked field effect transistor structure with independent gate control between top and bottom gates

A semiconductor device includes a field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extend vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region includes a conduit liner and an inner column internal to the conduit liner that extends below a bottom surface of the wraparound gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.

Field effect transistor with backside source/drain

A microelectronic structure including a stacked transistor having a lower transistor and an upper transistor. A shared contact in contact with a lower source/drain of the first lower transistor and an upper source/drain of the upper transistor. The shared contact includes a silicide layer, a metal plug layer, and a conductive metal layer.

Method and structure of forming sidewall contact for stacked FET

An interconnect layer for a device and methods for fabricating the interconnect layer are provided. The interconnect layer includes first metal structures arranged in a first array in the interconnect layer and second metal structures, arranged in a second array in the interconnect layer. The second array includes at least one metal structure positioned between two metal structures of the first metal structures. The interconnect layer also includes a spacer material formed around each of the first metal structures and the second metal structures and air gaps formed in the spacer material on each side of the first metal structures.

Electronic devices with a low dielectric constant

A method is presented for constructing a semiconductor device. The method includes forming a plurality of fins over a nanosheet stack and a substrate, forming spacers between the nanosheet stack and one or more of the plurality of fins, each spacer defining a different shape, forming gate spacers adjacent the plurality of fins, the gate spacers directly contacting the one or more of the plurality of fins having a spacer, forming a barrier spacer between a set of fins of the plurality of fins, the barrier spacer directly contacting a top surface of a shallow trench isolation (STI) region, forming n-type epitaxial regions between the plurality of fins, forming p-type epitaxy regions over the n-type epitaxial regions, and forming a first contact extending vertically through the semiconductor device adjacent the barrier spacer and extending laterally away from the barrier spacer to directly contact a sidewall of an n-type epitaxial region.

Bottom contact for stacked GAA FET

A method includes forming a p-type field effect transistor region and an n-type field effect transistor region into a semiconductor substrate. The method implements a process flow to fabricate highly doped top source/drains with minimal lithography and etching processes. The method permits the formation of VFETs with increased functionality and reduced scaling.

CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor

A field effect device is provided. The field effect device includes a lower active gate structure on a substrate, and a first lower source/drain on a first side of the lower active gate structure. The field effect device further includes a second lower source/drain on a second side of the lower active gate structure opposite the first side, and a first lower source/drain contact interface on the first lower source/drain. The field effect device further includes a first upper source/drain on the first side of an upper active gate structure, and a second upper source/drain on the second side of the upper active gate structure opposite the first side. The field effect device further a shared source/drain contact forming an electrical connection between the first lower source/drain and the first upper source/drain; and a lower source/drain contact forming an electrical connection to the second lower source/drain.

Middle of line structure with stacked devices

A semiconductor structure comprises two or more vertical fins, a bottom epitaxial layer surrounding a bottom portion of a given one of the two or more vertical fins, a top epitaxial layer surrounding a top portion of the given one of the two or more vertical fins, a shared epitaxial layer surrounding a middle portion of the given one of the two or more vertical fins, and a connecting layer contacting the bottom epitaxial layer and the top epitaxial layer, the connecting layer being disposed to a lateral side of the two or more vertical fins.

Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers

A high aspect ratio contact structure formed within a dielectric material includes a top portion and a bottom portion. The top portion of the contact structure includes a tapering profile towards the bottom portion. A first metal stack surrounded by an inner spacer is located within the top portion of the contact structure and a second metal stack is located within the bottom portion of the contact structure. A width of the bottom portion of the contact structure is greater than a minimum width of the top portion of the contact structure.

High aspect ratio contact structure with multiple metal stacks

Embodiments disclosed herein describe methods of forming semiconductor devices. The methods may include etching vias and trenches in a middle-of-line (MOL) layer that has a low-k dielectric layer, a sacrificial nitride layer, and a hard mask layer. The methods may also include depositing a thin nitride layer within the via trench, depositing a carbon layer on the thin nitride layer within the vias and trenches, etching back the thin nitride layer to expose a portion of the hard mask layer, removing the hard mask layer and the carbon layer, and removing the thin nitride layer and the sacrificial nitride layer.

Hard mask removal without damaging top epitaxial layer

A method of forming stacked vertical field effect devices is provided. The method includes forming a layer stack on a substrate, wherein the layer stack includes a first spacer layer on the substrate, a first protective liner on the first spacer layer, a first gap layer on the first protective liner, a second protective liner on the first gap layer, a second spacer layer on the second protective liner, a sacrificial layer on the second spacer layer, a third spacer layer on the sacrificial layer, a third protective liner on the third spacer layer, a second gap layer on the third protective liner, a fourth protective liner on the second gap layer, and a fourth spacer layer on the fourth protective liner. The method further includes forming channels through the layer stack, a liner layer on the sidewalls of the channels, and a vertical pillar in the channels.

Three-dimensional field effect device

Techniques for area scaling of contacts in VTFET devices are provided. In one aspect, a VTFET device includes: a fin(s); a bottom source/drain region at a base of the fin(s); a gate stack alongside the fin(s); a top source/drain region present at a top of the fin(s); a bottom source/drain contact to the bottom source/drain region; and a gate contact to the gate stack, wherein the bottom source drain and gate contacts each includes a top portion having a width W1over a bottom portion having a width W2, wherein W2<W1, and wherein a sidewall along the top portion is discontinuous with a sidewall along the bottom portion. The bottom portion having the width W2is present alongside the gate stack and the top source/drain region. A method of forming a VTFET device is also provided.

Area scaling for VTFET contacts

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Cohoes, NY, United States of America

Su Chen Fan