Samsung Display Co., Ltd.

Su Bin Bae

Sang Gab Kim

Yu-Gwang Jeong

Shin Il Choi

Hyun Min Cho

Yu Gwang Jeong

Joon Geol Lee

Yun Jong Yeo

Jung Yun Jo

Sung Won Cho

Tae Sung Kim

Seon-Il Kim

Dae Won Choi

Jin Seock Kim

Sang Gyun Kim

Kil Won Cho

Hyo Min Ko

Hansol Lee

Jin Hwan Choi

Hyun Sook Kim

Hyang-Shik Kong

Bong-Kyun Kim

Seung-Ha Choi

Tae An Seo

Hong Sick Park

Duk-Sung Kim

Jae Neung Kim

Chung-Seok Lee

Da Woon Jung

Sang Hyeon Song

Jeong Do Yang

Sho Yeon Kim

Jang-Kyum Kim

Seon Il Kim

Cheol Geun An

Shin Ii Choi

A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.

Display device and method of fabricating the same

A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Light emitting diode device and method of manufacturing the same

A display device includes a substrate; a first circuit part and a second circuit part on the substrate and spaced from each other in a first direction; and an emission part between the first circuit part and the second circuit part, the emission part being located between the first circuit part and the second circuit part in a direction parallel to the substrate, wherein the first circuit part includes a first electrode extending to the emission part, wherein the second circuit part includes a second electrode extending to the emission part, and wherein the emission part includes a light emitting element located between the first electrode and the second electrode.

Display device

An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Display device and manufacturing method thereof

A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70&#xb0; to about 90&#xb0;. A thickness of the capping layer is in a range of about 100 &#x212b; to about 300 &#x212b;, and a thickness of the main conductive layer is in a range of about 1,000 &#x212b; to about 20,000 &#x212b;.

Display device, method for forming a pattern and method for manufacturing display device

A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.

A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 &#x3bc;m, and each of the thicknesses of the first and second insulating layers is less than 1 &#x3bc;m.

Connecting structure of a conductive layer

A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Transistor array panel and manufacturing method thereof

A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

Growing community of inventors

Gyeongsan-si, South Korea

Su Bin Bae