Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stéphanie Jacob

Philippe Coronel

Mohamed Benwadih

Romain Gwoziecki

The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.

Growing community of inventors

Saint Siméon de Bressieux, France

Stéphanie Jacob