Qimonda Ag

Altis Semiconductor, Snc

Altis Semiconductor

Stéphane Cholet

A method of etching a programmable memory microelectronic device () having a substrate covered with at least one of the following layers in succession: a first electrode () based on a first metallic element; a layer () of chalcogenide doped with a second metallic element; a second electrode () based on a third metallic element; a diffusion barrier type electrically-conductive layer (); and a hard mask (); is provided. The method includes etching, using an inert gas plasma, at least the hard mask (), the electrically-conductive layer (), the second electrode () and the chalcogenide layer (), where the etching step is carried out by cathode sputtering at a temperature strictly less than 150&#xb0; C., preferably at a temperature of at most 120&#xb0; C., and particularly preferably at a temperature of at most 100&#xb0; C.

Method of etching a programmable memory microelectronic device

A method of manufacturing an integrated circuit including a memory device that includes the following processes: forming a mask layer structure above a composite structure including a resistivity changing layer and an electrode layer disposed above the resistivity changing layer; partially patterning the mask layer structure using a first substance; stopping patterning the mask layer structure before exposing the top surface of the electrode layer; at least partially exposing the top surface of the electrode layer using a second substance, the second substance chemically not reacting with the electrode layer material.

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Fontenay aux Roses, France

Stéphane Cholet