International Business Machines Corporation

Samsung Electronics Co., Ltd.

Infineon Technologies Ag

Stuart Stephen Papworth Parkin

Mahesh Govind Samant

Jonathan Zanhong Sun

Jaewoo Jeong

Yari Ferrante

Panagiotis Charilaos Filippou

Bruce David Terris

Rolf Allenspach

John Casimir Slonczewski

Chirag Garg

Roy E Scheuerlein

Douwe Johannes Monsma

Christopher O Lada

Christian Kaiser

Luc Thomas

David Jame Altknecht

Xin Jiang

See-Hun Yang

Robert E Erickson

Robert Fontana

Eric Andrew Joseph

John Kenneth DeBrosse

Solomon Assefa

Stefan Maat

William Joseph Gallagher

Ching Hwa Tsang

Michael C Gaidis

Wolfgang Raberg

Eric Edward Fullerton

Ulrich Karl Klostermann

Christy Sensenich Tyberg

Yu Lu

David A Thompson

Arunava Gupta

Kentaro Takano

Stephen L Brown

Sergey Faleev

Cheng-Han Yang

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by DE, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1compound, the magnetic layer being in contact with the templating structure.

Tunable templating layers for perpendicularly magnetized Heusler films

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by AE, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

Ferrimagnetic Heusler compounds with high spin polarization

A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by DE, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L1compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.

Templating layers for perpendicularly magnetized Heusler films/compounds

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.

Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds

A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by DE, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L1compound.

IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds

Electrolyte gating with ionic liquids is a powerful tool for inducing conducting phases in correlated insulators. An archetypal correlated material is VOwhich is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VOsuppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 K even after the ionic liquid is completely removed. We provide compelling evidence that, rather than electrostatically induced carriers, electrolyte gating of VOleads to the electric field induced creation of oxygen vacancies, and the consequent migration of oxygen from the oxide film into the ionic liquid.

Controlling the conductivity of an oxide by applying voltage pulses to an ionic liquid

A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.

Robotic device for substrate transfer applications

A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

Spin-current switchable magnetic memory element and method of fabricating the memory element

A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.

Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces

A shadow masking device for use in the semiconductor industry includes self-aligning mechanical components that permit shadow masks to be exchanged while maintaining precise alignment with the target substrate. The misregistration between any two of the various layers in the formed structure can be kept to less than 40 microns.

Method and apparatus for substrate-mask alignment

A device for use in the semiconductor industry includes a robotic arm whose end effector includes at least two prongs designed to hold a substrate carrier. A pushing member located between the prongs can move independently of the prongs and is configured to exert force against the substrate carrier while the prongs are retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the prongs are retracted. Each of the prongs may include a claw or gripping member for grasping the substrate carrier.

Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged.

Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces

A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

A method of fabricating a magnetic memory element includes forming a plurality of magnetic layers having a perpendicular magnetic anisotropy component, in which the plurality of magnetic layers includes a first magnetic layer having an alloy of a rare-earth metal and a transition metal, and a second magnetic layer.

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San Jose, CA, United States of America

Stuart Stephen Papworth Parkin