Asml Netherlands B.v.

Stoyan Nihtianov

Jeroen Johannes Sophia Maria Mertens

Joost Jeroen Ottens

Patricius Aloysius Jacobus Tinnemans

Marco Koert Stavenga

Theodorus Petrus Maria Cadee

Boris Menchtchikov

Koen Goorman

Martin Frans Pierre Smeets

Bart Leonard Peter Schoondermark

Erik Roelof Loopstra

Nicolaas Ten Kate

Johannes Henricus Wilhelmus Jacobs

Michel Riepen

Franciscus Johannes Joseph Janssen

Martinus Cornelis Maria Verhagen

Jacobus Johannus Leonardus Hendricus Verspay

Johannes Anna Quaedackers

Antonius Johannus Van Der Net

Herman Boom

Frederik Eduard De Jong

Christianus Gerardus Maria De Mol

Richard Moerman

Marcel Johannus Elisabeth Hubertus Muitjens

Maria Elisabeth Reuhman-Huisken

Petrus Wilhelmus Josephus Maria Kemper

Aschwin Lodewijk Hendricus Johannes Van Meer

Bearrach Moest

Marc Antonius Maria Haast

Arie Johan Van Der Sijs

Lis Karen Nanver

Thomas Ludovicus Maria Scholtes

Aschwin Lodewijk Hendricus Johannes Vermeer

Gerardus Wilhelmus Petrus Baas

Francesco Sarubbi

Antonius Andreas Johannes Schuwer

Gregory Micha Gommeren

Martijn Pot

Frits Van Der Meulen

Kenichi Kanai

Martinus Cornelis Reijnen

Gianpaolo Lorito

Xinqing Liang

Hans Butler

Henrikus Herman Marie Cox

Johannes Petrus Martinus Bernardus Vermeulen

Frank Staals

Thibault Simon Mathieu Laurent

Haico Victor Kok

Ruud Hendrikus Martinus Johannes Bloks

Tom Van Zutphen

Marcel Koenraad Marie Baggen

Martijn Houkes

Anastasius Jacobus Anicetus Bruinsma

Frank Auer

Kofi Afolabi Anthony Makinwa

Lambertus Gerardus Maria Kessels

Martijn Gerard Dominique Wehrens

Remko Wakker

Patrick David Vogelsang

Patricius Jacobus Neefs

Robert Jan Van Wijk

Frederick Eduard De Jong

Andrej Makarovic

Johannes Paul Marie De La Rosette

Kamen Hristov Chilov

Johannes Roland Dassel

Olaf Hubertus Wilhelmus Van Bruggen

Robertus Johannes Van Vliet

Roland Petrus Hendrikus Hanegraaf

Petrus Wilhelmus Joseph Maria Kemper

Mana Elisabeth Reuhman-Huisken

Jacobus Johannus Leonardus Hendricus Verspaij

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

Semiconductor detector and method of fabricating same

A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and a heater.

Lithographic apparatus and device manufacturing method involving a heater

A measurement system for measuring a position and/or displacement of an object (), the measurement system comprising a sensor () and a target (), the sensor comprising an electromagnet (); a driving circuit () configured to drive the electromagnet to generate an alternating magnetic field (AMF); a measuring circuit () configured to measure an electrical impedance parameter of the electromagnet; the target being located on a surface () of the object that faces the sensor, wherein the target comprises a graphene layer (), and wherein, in use, when the alternating magnetic field interacts with the target, the alternating magnetic field changes (RMF), altering the electrical impedance parameter of the electromagnet.

Measurement systems, lithographic apparatus, device manufacturing method and a method of measuring

A measurement substrate for measuring a condition pertaining in an apparatus for processing production substrates during operation thereof, the measurement substrate including: a body having dimensions compatible with the apparatus; a plurality of sensor modules embedded in the body, each sensor module having: a sensor configured generate an analog measurement signal, an analog to digital converter to generate digital measurement information from the analog measurement signal, and a module controller configured to output the digital measurement information; and a central control module configured to receive the digital measurement information from each of the module controllers and to communicate the digital measurement information to an external device.

Measurement substrate and a measurement method

A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a substrate temperature control system configured to provide a control signal to control a substrate temperature conditioning system based on a determined temperature; and a parameter control system configured to adjust a lithographic apparatus parameter, that is other than, or in addition to, the control signal, based on temperature information of the substrate and/or substrate table or on a measure derived from the temperature information.

A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Sensor and lithographic apparatus

Lithographic apparatus and device manufacturing method involving a heater and a temperature sensor

In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector

A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

A lithographic apparatus having a stationary magnet motor to drive a support such as a substrate support or a patterning device support, may be provided with a measurement system to measure a position of the support in question, e.g., to provide a safety system to prevent a collision of the support with another part. The measurement system may be configured to measure a magnetic field strength of an alternating magnetic field generated by the magnet assembly of the stationary magnet motor, and/or measure generation of eddy currents in a metallic layer shielding the magnet assembly in combination with an inductance measurement of an electromagnet generating the alternating magnetic field causing the eddy currents, and/or measure light using an optical position sensitive sensor such as a CCD metric or linear photodiode positioned in a light plane emitted by an emitter.

Lithographic apparatus and position sensor

A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.

Lithographic apparatus and device manufacturing method having liquid evaporation control

The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector

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Eindhoven, Netherlands

Stoyan Nihtianov