Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Other

Centre National De La Recherche Scientifique

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (rousset) Sas

Stéphane Monfray

Thomas Skotnicki

Philippe Coronel

Onoriu Puscasu

Guillaume Bouche

Didier Dutartre

Fabrice Casset

Pascal Ancey

Guillaume Savelli

Sébastien Boisseau

Nicolas Abelé

Alexandre Talbot

Christophe Maitre

Karim Segueni

Séverin Trochut

Nicolas J Loubet

Frédéric Boeuf

Aomar Halimaoui

Damien Lenoble

Bruno Reig

Frédéric Gaillard

Sandrine Lhostis

Emmanuel Ollier

Jérôme Willemin

Jean-Luc Huguenin

Olga Kokshagina

Ulrich Soupremanien

Emmanuel Dubois

Olivier Le Neel

Arthur Arnaud

Vincent Puyal

Stéphan Borel

Alain Fleury

Jihane Boughaleb

Claire Fenouillett-Beranger

Philippe Cathelin

The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.

System for measuring the power level of an ambient energy source

A circuit for comparing a voltage with a threshold, including: first and second nodes of application of the voltage; a first branch including a first transistor series-connected with a first resistor between first and second nodes; a second branch parallel to the first branch, including second and third series-connected resistors forming a voltage dividing bridge between the first and second nodes, the midpoint of the dividing bridge being connected to a control node of the first transistor; and a third branch including a second transistor in series with a resistive and/or capacitive element, between the control node of the first transistor and the first or second node, a control node of the second transistor being connected to the junction point of the first transistor and of the first resistor.

Circuit for comparing a voltage with a threshold

System for converting thermal energy into electrical energy (S) intended to be arranged between a hot source (SC) and a cold source (SF), comprising means for converting thermal energy into mechanical energy () and a piezoelectric material, with the means for converting thermal energy into mechanical energy () comprising groups (GG) of at least three bimetallic strips () linked mechanically together by their longitudinal ends and suspended above a substrate (), each bimetallic strip () comprising two stable states wherein it has in each of the states a curvature, with two directly adjacent bimetallic strips () having for a given temperature opposite curvatures, with the switching from one stable state of the bimetallic strips () to the other causing the deformation of a piezoelectric material.

Thermal energy harvesting optimisation with bistable elements and collaborative behavior

A tunnel-effect power converter including first and second electrodes having opposite surfaces, wherein the first electrode includes protrusions extending towards the second electrode.

Tunnel-effect power converter

An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.

System for conversing thermal energy into electrical energy

A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes.

Device for converting thermal energy into electric energy in the presence of a hot source

An energy harvester including first and second sheets; and a plurality of walls, each wall being sandwiched between the first and second sheets and surrounding a cavity, wherein each cavity houses at least one curved plate adapted to change from a first shape to a second shape when its temperature reaches a first threshold and to return to the first shape when its temperature falls to a second threshold lower than said first threshold.

Energy harvesting device

A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

Method for manufacturing a suspended membrane and dual-gate MOS transistor

A method of forming at least one curved plate having first and second layers, the first layer being formed of a first material and the second layer being formed of a second material, the method including forming one or more blocks of a fusible material on a surface of a substrate; baking the one or more blocks to deform their shape; and depositing the first and second materials over the one or more deformed blocks to form the first and second layers.

Curved plate and method of forming the same

A detector of biological or chemical material, including a MOS transistor having its channel region inserted between upper and lower insulated gates, the upper insulated gate including a detection layer capable of generating a charge at the interface of the upper insulated gate and of its gate insulator, the thickness of the upper gate insulator being smaller than the thickness of the lower gate insulator.

Detector of biological or chemical material and corresponding array of detectors

An electronic component including a number of insulated-gate field effect transistors, said transistors belonging to at least two distinct subsets by virtue of their threshold voltage, wherein each transistor includes a gate that has two electrodes, namely a first electrode embedded inside the substrate where the channel of the transistor is defined and a second upper electrode located above the substrate facing buried electrode relative to channel and separated from said channel by a layer of dielectric material and wherein the embedded electrodes of all the transistors are formed by an identical material, the upper electrodes having a layer that is in contact with the dielectric material which is formed by materials that differ from one subset of transistors to another.

Electronic component comprising a number of MOSFET transistors and manufacturing method

A device for generating electrical energy from the heat dissipated by a heat source, comprising: a capacitor comprising two electrodes between which a ferroelectric material is present, said capacitor being arranged so as to be positioned to capture all or part of the heat dissipated by said heat source; a capacitive element a first electrode of which is connected to a first electrode of said capacitor; a recovery circuit interposed between the second electrode of said capacitor and the second electrode of the capacitive element, and able to have the current flowing between said second electrodes pass through it. a mechanism adapted to move the capacitor with respect to the heat source, said mechanism having at least one arm able to move between two positions, the capacitor being closer to the heat source in one of the two positions.

Electrical energy generation device

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Microresonator

A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second active zone is below the first active zone. First and second layers of semiconductor material are formed on the second active zone, so that the second layer is substantially in the same plane as the first active zone. Insulated gates are produced on the first active zone and the second layer. At least one isolation trench region is selectively removed, and the first layer is selectively removed so as to form a tunnel under the second layer. The tunnel is filled with a dielectric material to insulate the second layer from the second active zone of the substrate. Also provided is such an integrated circuit.

Method for integrating silicon-on-nothing devices with standard CMOS devices

Growing community of inventors

Eybens, France

Stéphane Monfray