University of California

Steven Wienecke

Umesh Kumar Mishra

Stacia Keller

Brian Romanczyk

Matthew Guidry

Elaheh Ahmadi

Xun Zheng

Haoran Li

A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (InGaN) and indium composition (In) was investigated for different channel thicknesses. With optimizedInGaN andIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm/(V&#xb7;s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm InGaN composite channel.

Structure for increasing mobility in a high electron mobility transistor

Growing community of inventors

Santa Barabara, CA, United States of America

Steven Wienecke