University of Florida Research Foundation Inc

Steven W Johnston

Timothy J Anderson

Carlos Gilberto Ortiz

Lisa McElwee-White

Omar J Bchir

Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L W(NR)X , where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L and X are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.

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San Jose, CA, United States of America

Steven W Johnston