Applied Materials, Inc.

Steven Victor Sansoni

Vincent E Burkhart

Manjunatha P Koppa

Vijay D Parkhe

Cheng-Hsiung Matt Tsai

Jeffrey Allen Brodine

Cheng-Hsiung Matthew Tsai

Allen Flanigan

Glen T Mori

Song-Moon Suh

Shreesha Y Rao

Mukund Sundararajan

Jeffrey C Hudgens

David T Or

Aravind Kamath

Manjunath H Venkataswamappa

Kirankumar Neelasandra Savandaiah

Alexander N Lerner

Lara Hawrylchak

Michael Santiago Cox

Roey Shaviv

Jallepally Ravi

Michael C Kuchar

Shambhu Nath Roy

Kevin Vincent Moraes

Kim Ramkumar Vellore

Andrew J Constant

Michael P Karazim

Yuanhong Guo

Matvey Farber

Sheng Michael Guo

Marek W Radko

Yuji Murayama

Niranjan Kumar

Pulkit Agarwal

Shaofeng Chen

Pingping Gou

Nagendra Madiwal

Anurag Bansal

Michael Robert Rice

Philip Allan Kraus

John C Forster

Anantha K Subramani

Muhammad M Rasheed

Keith A Miller

Eric Andrew Englhardt

Thomas B Brezoczky

Karl M Brown

Nir Merry

Martin Lee Riker

Hari K Ponnekanti

Michael N Sugarman

Dean C Hruzek

Bencherki Mebarki

Muhannad Mustafa

Hamid Tavassoli

Prashanth Kothnur

Amitabh Puri

Vikash Banthia

John Joseph Mazzocco

Farzad Houshmand

Daniel A Greenberg

Yang Guo

Robert Irwin Decottignies

Amikam Sade

Ami Sade

Praburam Gopal Raja

Anthony Ct Chan

Steve Szudarski

Andrew Scott Cornelius

Peter Irwin

Cheng-Tsiung Tsai

A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Organic contamination free surface machining

Embodiments of a substrate support are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a lower assembly having a base plate assembly, wherein the base plate assembly includes a plurality of electrical feedthroughs disposed about a central protrusion; a ceramic puck disposed on the lower assembly and removeably coupled to the base plate assembly, wherein the ceramic puck has an electrode disposed therein that is electrically coupled to first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and a flexible connector having a spiral portion disposed between the ceramic puck and each of the plurality of electrical feedthroughs to allow for differences in thermal expansion of the ceramic puck and the base plate assembly.

Detachable biasable electrostatic chuck for high temperature applications

A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Processing system for forming layers

Base plate for a processing chamber substrate support

Substrate transfer robot blades used to engage and support a substrate during transfer include a blade body having a blade support surface and at least one pad having a top surface and an opposite bottom surface, a central opening extending from the top surface to the bottom surface, and a resilient portion formed from the at least one pad. The resilient portion formed from the at least one pad extends from and cantilevers from a side surface of the central opening of the at least one pad that is disposed directly on the side surface at the end of a long axis of the resilient portion. The resilient portion further includes a curved substrate contact surface on an outermost end of the resilient portion on which a substrate is supported when disposed on the substrate transfer robot blade.

Compliant robot blade for substrate support and transfer

Process shield for a substrate processing chamber

Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

Methods and apparatus for producing low angle depositions

Deposition ring for a substrate processing chamber

Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

Substrate carrier having hard mask

Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

Process kit design for in-chamber heater and wafer rotating mechanism

Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Substrate support apparatus having reduced substrate particle generation

Growing community of inventors

Livermore, CA, United States of America

Steven Victor Sansoni