Advanced Micro-fabrication Equipment Inc, Shanghai

Steven Tianxiao Lee

Quanyong Guo

Baoxia Tian

Yingbin Liu

Yousen Li

Lu Chen

Zhehao Chen

David Zhehao Chen

Chaoqian Zhang

Yanzhong Ma

Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obtained via the apparatus.

Apparatus and method for controlling heating of base within chemical vapour deposition chamber

A method for measuring a temperature of a film in a reaction chamber is provided. The method includes: obtaining reflectivity sampling data R of a sampling point set in a detection area of the film for light with a wavelength &#x3bb;, and thermal radiation value sampling data E of the sampling point set; obtaining a first correction factor &#x3b1; and a second correction factor &#x3b3; according to values of at least two sampling data groups, wherein 0&#x3c;&#x3b1;&#x2266;1, 0&#x2266;&#x3b3;&#x2266;1; obtaining a blackbody radiation value Lof the detection area of the film for the light with the wavelength &#x3bb; according to the first correction factor &#x3b1;, the second correction factor &#x3b3; and the values of the at least two sampling data groups; obtaining a temperature T of the detection area by looking up a table according to the blackbody radiation value Land the wavelength &#x3bb;.

Method for measuring temperature of film in reaction chamber

A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(&#x3bb;)=T(d)&#xd7;M(&#x3bb;,T), where E(&#x3bb;) is the ith radiant quantity corresponding to the ith wavelength &#x3bb;, T(d) is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M(&#x3bb;,T) is blackbody radiation equation, which is a function of the ith wavelength &#x3bb;and the substrate temperature T.

Method and device for measuring temperature of substrate in vacuum processing apparatus

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Shanghai, China

Steven Tianxiao Lee