Microchip Technology Inc.

Steven Schell

Pei-Ming Daniel Chow

Mau-Chung Frank Chang

Bun Kobayashi

Yon-Lin Kok

Jing Zhu

Yonghan Chris Kim

A multi-gate Schottky depletion-mode field effect transistor (FET), at least one diode and two resistors comprise a compact electrostatic discharge (ESD) protection structure. This ESD protection structure can be laid out in a smaller area than typical multiple diode ESD devices. The multi-gate FET may comprise various types of high-electron-mobility transistor (HEMT) devices, e.g., (pseudomorphic) pHEMT, (metamorphic) mHEMT, induced HEMT. The multiple gates of the Schottky field effect device are used to form an ESD trigger and charge draining paths for protection of circuits following the ESD protection device. Both single and dual polarity ESD protection devices may be provided on an integrated circuit die for protection of input-output circuits thereof.

Compact electrostatic discharge (ESD) protection structure

A step gain amplifier has an amplifier with an input and an output, and a bias circuit connected to the input and to a bias node. A passive feedback circuit using only passive elements connects the output to the input. A control circuit is connected to the bias circuit at the bias node.

Amplifier circuit with step gain

An attenuator system comprises an attenuator and a control circuit for controlling the attenuation of the attenuator. In one embodiment, the attenuator comprises two diodes or two diode connected transistors, and the control circuit comprises two transistors as the only active devices. In another embodiment, the control circuit comprises another transistor in a shut down circuit.

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Torrance, CA, United States of America

Steven Schell