International Business Machines Corporation

Globalfoundries Inc.

Steven S Williams

Timothy Dooling Sullivan

Max Gerald Levy

David C Thomas

Matthew D Moon

Gary L Milo

Anthony C Speranza

Edward Crandal Cooney, Iii

William Joseph Murphy

Mark D Dupuis

Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

Controlled metal extrusion opening in semiconductor structure and method of forming

Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices. The intervening materials or structures, such as contacts extending through an insulating layer of a local interconnect level between the contact level and the semiconductor devices, provide paths for the transfer of stress from the stress-imparting structures to the stress-modified semiconductor devices.

Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit

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Essex Junction, VT, United States of America

Steven S Williams