The University of New Mexico

Other

Massachusetts Institute of Technology

Armonica Technologies, Inc.

The United States of America as Represented by the Department of Health

Sandia National Laboratories

Steven Roy Julien Brueck

Seung-Chang Lee

Alexander Neumann

Yuliya Kuznetsova

Daniel F Feezell

Stephen D Hersee

Gabriel P Lopez

Saleem H Zaidi

Linnea K Ista

Jeremy Scott Edwards

Payman Zarkesh-Ha

Alexander Kenneth Raub

Christian Wetzel

Edgar A Mendoza

Andrew Frauenglass

Mark Durniak

Sanjay Krishna

Deying Xia

Tito Busani

Mahmoud Behzadirad

Seung Chang Lee

Xiang-Cun Long

C Jeffrey Brinker

Xiaolan Chen

David Bruce Burckel

Dimiter N Petsev

David R Myers

Michael J O'Brien

Joshua B Ballard

Mangesh Bore

Ashwani K Sharma

Xiang He

Steve Benoit

Ashwin Krishnan Rishinaramangalam

Aurelio Evangelista Lara

An-Shyang Chu

Dong Li

Vineeth Sasidharan

Xin Jin

Victor C Esch

John Neal Randall

Janusz S Wilczynski

Sang M Han

Marek A Osinski

Ravinder K Jain

Daniel J Devine

John R McNeil

Cornelius F Ivory

Bruce L Draper

David Zubia

Richard M Osgood, Iii

Ron Kaspi

Thomas M Brennan

Burrell E Hammons

Kevin J Malloy

S Sohail Naqvi

Richard A Myers

Brian R Stallard

Juan Jose Faria Briceno

Kenneth P Bishop

John M Randall

Wenjun Fan

Gary D Tipton

Nandini Mukherjee

Kirt C Hickman

Susan M Gaspar

Christian F Schaus

Daniel Feezell

Xiangcun Long

Soares, Schubert

Theeradetch Detchprohm

Bill W Mullins

Christoph Stark

Kristin McArdle

Ruichao Zhu

Helge Kildal

John G McInerney

M Yasin Raja

Yulia Kuznetsova

Alexander K Raub

Liang Xue

Anthony L Garcia

Paul Bisong

Shuang Zhang

Olga Amosova

Daniel P Dapkus

Anupama Suryanaraya

In accordance with some aspects of the present disclosure, a maskless interferometric lithography system for fabricating a three-dimensional (3D) photonic crystal using a multiple two-beam-exposures is disclosed. The system can comprise an illumination system comprising an optical arrangement operable to receive radiation from a radiation source and provide three or more tilted two-beam interference pattern exposures to be combined into a three-dimensional pattern; and a substrate operable to be supported by a substrate table, wherein the substrate comprises a photoresist formed on a top surface of the substrate and operable to receive the three-dimensional pattern and wherein means are provided to adjust the position of the substrate in all six mechanical degrees of freedom.

Method and apparatus for fabrication of large area 3D photonic crystals with embedded waveguides

A system for oblique incidence nanopatterning a sample using a grating beam-splitter is disclosed. The system also includes a grating beam-splitter on a tip-tilt adjustable mount. The system also includes a photoresist coated sample mounted on a tip-tilt-z adjustable mount. The system also includes an alignment system to allow adjustment of the tip-tilt adjustable mounts so that a surface of the grating beam-splitter and a surface of the photoresist coated sample are substantially parallel. The system also includes a laser operating at a wavelength suitable for exposure of the photoresist. The system also includes an optical system to deliver a laser beam at oblique incidence to the grating beam-splitter to expose the photoresist coated sample. The system also includes means to control an exposure dose of the laser beam. A system using two grating beam-splitters to provide increased alignment tolerance is also disclosed.

Dual diffraction order spin-on-glass phase-grating beam-splitter based oblique incidence nanopatterning and methods thereof

Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (>wavelength), ˜1-nm aperture 'tortuous' nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Innovative nanopore sequencing technology

A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.

Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure

According to examples of the present disclosure, a method for large-area, full-wafer nanopatterning is disclosed. The method includes providing a laser light source; providing beam conditioning and translation optics to expand the beam to illuminate a full wafer area; providing a grating beam-splitter; providing recombination optics to direct at least two beams from the grating beam splitter to a full wafer photoresist-coated target; and exposing the full wafer photoresist-coated target.

Interferometric lithography grating-mask-based wafer-scale large-area nanopatterning

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips

The invention generally relates to improved enhancement structures for use in surface-enhanced Raman scattering (SERS) and/or surface-enhanced fluorescence-based analysis.

Enhancement structures for surface-enhanced Raman scattering

Nucleic acid sequencing methods and systems, the systems including nanochannel chip including: a nanochannel formed in an upper surface of the nanochannel chip and; a roof covering the nanochannel and comprising nanopores and a field enhancement structure; and a barrier disposed in the nanochannel. The method including: introducing a buffer solution including long-chain nucleic acids to the nanochannel chip; applying a voltage potential across the nanochannel chip to drive the nucleic acids through the nanochannel, towards the barrier, and to translocate the nucleic acids through nanopores adjacent to the barrier, such that bases of each of the nucleic acids pass through the field enhancement structure one base at a time and emerge onto an upper surface of the roof; detecting the Raman spectra of the bases of the nucleic acids as each base passes through the electromagnetic-field enhancement structure; and sequencing the nucleic acids based on the detected Raman spectra.

Manipulating the translation of DNA strands across and through nanopore sequencing systems using Raman signatures to identify DNA bases and methods

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

Integrated bound-mode spectral/angular sensors

Methods and apparatus for long read, label-free, optical nanopore long chain molecule sequencing. In general, the present disclosure describes a novel sequencing technology based on the integration of nanochannels to deliver single long-chain molecules with widely spaced (&#x3e;wavelength), &#x2dc;1-nm aperture 'tortuous' nanopores that slow translocation sufficiently to provide massively parallel, single base resolution using optical techniques. A novel, directed self-assembly nanofabrication scheme using simple colloidal nanoparticles is used to form the nanopore arrays atop nanochannels that unfold the long chain molecules. At the surface of the nanoparticle array, strongly localized electromagnetic fields in engineered plasmonic/polaritonic structures allow for single base resolution using optical techniques.

Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

Nanowire bending for planar device process on (001) Si substrates

A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal

Method of making heteroepitaxial structures and device formed by the method

Device with heteroepitaxial structure made using a growth mask

Growing community of inventors

Albuquerque, NM, United States of America

Steven Roy Julien Brueck