Intel Corporation

Tokyo Electron Limited

US Government As Represented by the Secretary of the Army

Steven Robert Soss

Krishna Kumar Parat

Keisuke Suzuki

Anthony Dip

David Paul Brunco

Toshiyuki Ikeuchi

Toh-Ming Lu

Shyam P Murarka

Kimiya Aoki

Sabrina L Lee

Kevin E Mello

A method of forming a microelectronic non-volatile memory cell, a memory cell formed according to the method, and a system including the memory cell. The method comprises: providing a substrate; providing a pair of spaced apart isolation bodies on the substrate, the isolation bodies including respective raised isolation portions, providing the pair comprising providing a buffer layer on the substrate; providing pillar spacers on side walls of the raised isolation portions; removing the buffer layer after providing the pillar spacers; removing the pillar spacers during removing the buffer layer; providing a tunnel dielectric on the surface of the substrate after removing the buffer layer; providing a floating gate on the tunnel dielectric; reducing a height of the isolation bodies to yield corresponding isolation regions; providing source and drain regions on opposite sides of the floating gate; providing an interpoly dielectric on the floating gate; and providing a control gate on the interpoly dielectric to yield the memory cell.

Method of forming non-volatile memory cell using sacrificial pillar spacers and non-volatile memory cell formed according to the method

A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vesselwhich has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.

Method of oxidizing work pieces and oxidation system

A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.

Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt

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San Jose, CA, United States of America

Steven Robert Soss