Varian Semiconductor Equipment Associates, Inc.

Hitachi Zosen Corporation

Mks Instruments, Inc.

The United States of America As Represented by the United States

Serac Group

Steven Raymond Walther

Sandeep Mehta

Michael Lawrence Bufano

Gerald M Friedman

Paul Sullivan

Peter Nunan

Ukyo Jeong

Julian G Blake

Richard S Muka

Jonathan Gerald England

Naushad K Variam

Harold M Persing

Reuel B Liebert

Morgan Evans

Bon-Woong Koo

Brian Phillips

Paul J Murphy

Anne Testoni

Shaun T Smith

Yuri Erokhin

William Frederick Thomson

Peter F Hays

P Michael Fletcher

Stephen Whittaker Into

Arthur Wayne Sommerstein

Chen Wu

Timothy J Miller

Ka-Ngo Leung

Jay Thomas Scheuer

Kyu-Ha Shim

Ziwei Fang

Rajesh Dorai

Scott C Holden

Bernard Lindsay

Bjorn O Pedersen

Nicholas R White

Norman E Hussey

Jinning Liu

Chris Leavitt

Wulf B Kunkel

Justin Tocco

Carleton F Ellis, Iii

Rekha Padmanabhan

Disclosed is a system and method for delivering reactive species from a plasma to a treatment area by scanning a linear array of stacked plasma elements across the treatment area. Reactive species output from each plasma element is calibrated, and during scanning each plasma element is modulated with a uniformity modulation and a dose modulation, enabling a predetermined contour dose distribution of reactive species to be delivered to the treatment area.

Process control for atmospheric plasma treatment of surfaces

Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.

Apparatus and method for plasma ignition with a self-resonating device

An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.

Electron beam exit window in electron beam emitter and method for forming the same

Improved electron beam sterilization apparatus and shielding techniques for use in are provided. A controller modulates an electron beam when sterilizing an interior to an object to ensure that adequate dose is received. Sterilization carousels are configured with input/discharge feeds to reduce the possibility of humans being exposed to dangerous levels of radiation. The system reduces the amount of shielding required to thereby lower cost of installation.

Electron beam sterilization apparatus

Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Patterned assembly for manufacturing a solar cell and a method thereof

An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.

Electron beam emitter with slotted gun

Methods and apparatuses for reducing heat on an emitter exit window

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Technique for low-temperature ion implantation

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Techniques for temperature controlled ion implantation

A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

Wafer bonding activated by ion implantation

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

Cleave initiation using varying ion implant dose

Growing community of inventors

Andover, MA, United States of America

Steven Raymond Walther