Advanced Ion Beam Technology, Inc.

Steven R Walther

Chien-Li Chen

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

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Hsin-Chu, Taiwan

Steven R Walther