Ipg Photonics Corporation

Steven R Maynard

William Shiner

Jeffrey P Sercel

Marco Mendes

Rouzbeh Sarrafi

Vijay Kancharla

A fiber laser-treated workpiece is configured with a body having a discontinuous surface which defines a plurality of spaced through-going passages so that each passage is delimited by a peripheral layer having a surface characteristic which includes a recast layer or one or more microcracks or a combination thereof. The passages are provided by a high power Yb fiber laser operating in a pulsed regime and configured to output either a single pulse per an entire passage or a train of pulses per the passage. The Yb fiber laser is so configured that, if formed, the recast layer and micro-crack each are smaller than respective standards in an airspace industry.

High power fiber laser effusion hole drilling apparatus and method of using same

Systems and methods for laser drilling provide laser beam energy modification to reduce (e.g., eliminate or minimize) back-wall strikes during laser drilling. The systems and methods modify the process laser beam energy such that a beam energy at a central region of the process laser beam is less than a beam energy at an outer region of the process laser beam. In one example, the modified process beam has zero beam energy at the central region, thereby providing a 'donut mode.' The laser beam energy modification may be achieved by detuning a fiber coupler in the Z axis such that laser energy is coupled into a cladding layer of the process fiber coupled to the laser fiber via the fiber coupler.

Laser beam energy modification to reduce back-wall strikes during laser drilling

Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter 'QCW laser'). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.

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Dudley, MA, United States of America

Steven R Maynard