Bank of Canada

Best Theratronics Ltd.

Steven Paul McGarry

Langis Roy

Andrea Victoria Firth

Behzad Yadegari

Alasdair Patrick Rankin

Low power non-volatile non-charge-based variable supply RFID tag memory devices and methods for reading and writing predetermined ID values for a RFID tag are described. The RFID tag memory device includes a reference/bias generator that receives and provides voltages and currents for write and read operations, a clocked comparator that provides a voltage comparison with a reference voltage, a shift register that receives a non-charge-based memory component value saved in the shift register, a memory cell that includes non-charge-based memory components to store corresponding predetermined ID values, a ring counter that provides ring signals to enable sequential writing and reading of the predetermined ID values to and from the memory cell, a write decision component that receives ring signals to enable the write operation, an output select/isolation component for reading and a read/write component to enable reading or writing the predetermined ID values in response to received ring signals.

Low power non-volatile non-charge-based variable supply RFID tag memory

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 &#x3bc;m (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.

Low power dual-sensitivity FG-MOSFET sensor for a wireless radiation dosimeter

Disclosed herein are devices that change their appearance and/or physical properties when under an external influence, and methods for their production and use. Such devices may be used as features of any type of items, documents, billboards, posters, display devices, advertisements and other items etc. and may be adapted to include decipherable content. Such devices also afford new techniques for a user to check quickly and easily whether the item is a legitimate or a counterfeit copy, either by hand-manipulation of the device, or with the assistance of an additional screening tool.

Growing community of inventors

Ottawa, Canada

Steven Paul McGarry