Texas Instruments Corporation

International Business Machines Corporation

Steven P Zuhoski

Richard Anthony Conti

Jeffrey Alan West

David Edward Kotecki

Justin W Wong

Mercer Brugler

Donald L Wilson

Cameron Gross

Michael D Barth

Edward L Mickler

Doping copper interconnects () with silicon () has been shown to improve Electromigration and Via Stress Migration reliability. After copper () is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiHover the copper interconnect () for 0.5 to 5 seconds at a temperature of 325-425&#xb0; C.

Method for improving reliability of copper interconnects

A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat ( ) is deposited to protect and encapsulate the top metal interconnect layer ( ). The protective overcoat ( ) is patterned and etched to form bondpad windows either before or after depositing the final metal interconnect layer ( ). A sinter that is normally performed after forming the bondpad windows is either omitted or the temperature of the sinter is kept at or below 350&deg; C.

Control of Vmin transient voltage drift by maintaining a temperature less than or equal to 350&deg; C. after the protective overcoat level

A removable gas injector design compatible for use in chemical vapor deposition reactors that allows proper mixing of the reactant gases, reduced cycle time associated with cleaning of gas injector components, and elimination of uncertainties associated with manual cleaning of the injector. A better reliability to the system due to the known condition of the nozzle after a clean is achieved.

Removable gas injectors for use in chemical vapor deposition of

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Rowlett, TX, United States of America

Steven P Zuhoski