University of California

Japan Science and Technology Agency

Cree Gmbh

Akoustis, Inc.

King Abdulaziz City for Science and Technology

Soraa Laser Diode, Inc.

Cree Lighting Company

Other

US Government As Represented by the Secretary of the Army

Hughes Electronics Corporation

Agency of Industrial Science and Technology

Superconductor Technologies Inc.

Kyocera Sld Laser, Inc.

Regents of the Univeristy of California

Universitaet Bremen

Steven P DenBaars

Shuji Nakamura

James Stephen Speck

Umesh Kumar Mishra

Benjamin A Haskell

Arpan Chakraborty

Hitoshi Sato

Troy J Baker

Robert M Farrell

Anurag Tyagi

Michael Iza

Stacia Keller

Hirokuni Asamizu

Daniel F Feezell

Michael D Craven

Erin C Young

Makoto Saito

Max Batres

Kenji Iso

John F Kaeding

Hong Zhong

Mathew C Schmidt

Paul Thomas Fini

Claude C A Weisbuch

Hiroaki Ohta

Asako Hirai

Aurelien J F David

Rajat Sharma

Brian Thibeault

Hisashi Yamada

Hisashi Masui

Kwang-Choong Kim

Daniel Bryce Thompson

Michael Mack

Casey O Holder

Ram Seshadri

Tal Margalith

Benjamin P Yonkee

Monica Hansen

Daniel A Cohen

P Morgan Pattison

Bilge M Imer

Roy B Chung

Zhongyuan Jia

James W Raring

Bernd P Keller

Eric J Tarsa

Paul Rudy

Melvin McLaurin

Frederic Stephane Diana

Po Shan Hsu

Jacob J Richardson

Frederick F Lange

Kathryn Merced Kelchner

Michael Coulter

Akihiko Murai

Asad J Mughal

Jeffrey Blanton Shealy

George R Brandes

Shawn R Gibb

Zhen Chen

Lee McCarthy

Kwang Choong Kim

Natalie DeMille

Dong-Seon Lee

Feng Wu

Won-Bin Im

Kenneth J Vampola

Ingrid Koslow

Daniel A Haeger

Vinod Khosla

Troy Trottier

Evelyn Lynn Hu

Craig Moe

Adele Clare Tamboli

John T Leonard

Hirohiko Hirasawa

Sang Ho Oh

Jun Seok Ha

Pierre Lamond

Eu Jin Hwang

Natalie Nichole Fellows

Christina Ye Chen

Shigemasa Matsuda

John Adam Edmond

James Ibbetson

John E Bowers

Adam William Saxler

Alan J Heeger

Larry Allen Coldren

Alexander Sztein

Derrick S Kamber

Henri Benisty

Carl Joseph Neufeld

You-Da Lin

David Hwang

Michael Cantore

Abdulrahman Albadri

Detlef Hommel

Ahmed Alyamani

According to the present invention, techniques related generally to a photodiode device configured to be receptive to a near ultraviolet (UV-C) emission wavelength range. This wavelength range is specifically designed to be immune to background radiation produced by the Sun, rendering the communication device Solar Blind, and immune to other similar forms of interference. In particular, the present invention provides a light receiving and sensing system using various compositional Al, Ga, Sc, and N solid state materials to detect and measure radiation with a high degree of fidelity. This invention has numerous applications not only in detection and sensing technologies, but also measurement, communication, navigation, and other related aspects.

Solar blind solid state gallium containing photodiode device and related method

A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

Method for processing of semiconductor films with reduced evaporation and degradation

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where &#x2212;15&#x3c;x&#x3c;&#x2212;1 and 1&#x3c;x&#x3c;15 degrees.

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/&#x2212; 15 degrees in the c-direction

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 &#x3bb;, or at least 20 &#x3bb;, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In&#x2014;Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

III-nitride surface-emitting laser and method of fabrication

A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

Contact architectures for tunnel junction devices

A method for fabricating a composite useful in a white light emitting device, includes mixing a phosphor and a filler to form a mixture; sintering the mixture (e.g., using spark plasma sintering) to form a composite; and annealing the composite to reduce oxygen vacancies and improve optical properties of the composite. Also disclosed is a white light emitting device including a laser diode or light emitting diode optically pumping the phosphor in the composite to produce white light. The composite fabricated using the method (and having. e.g., at most 50% phosphor by weight) can (1) reduce an operating temperature of the phosphor by 55 degrees, (2) increase an external quantum efficiency (e.g., by at least 15%) of the white light emitting device, and (3) result in color points and quality of the white light that is equal to or improved, as compared to without the filler.

Ce:YAG/A1Ocomposites for laser-excited solid-state white lighting

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Hybrid growth method for III-nitride tunnel junction devices

A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cmdrive current and less than 15% at 35 A/cmdrive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 &#x3bc;m. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

Infrared illumination device configured with a gallium and nitrogen containing laser source

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 &#x3bc;m. A flip chip display device is also disclosed.

Methods for fabricating III-nitride tunnel junction devices

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Goleta, CA, United States of America

Steven P DenBaars