Tel Epion Corporation

Tokyo Electron Limited

Steven P Caliendo

Joseph T Hillman

Nicolaus J Hofmeester

Noel Russell

Joshua LaRose

Ruairidh Maccrimmon

Hongyu Henry Yue

Vincent Gizzo

John J Hautala

Gerrit J Leusink

Cory Wajda

Richard Charles Westhoff

Soo Doo Chae

Nicholas Joy

Yan Shao

Luis Fernandez

Vincent Lagana-Gizzo

Thomas G Tetreault

Allen J Leith

John G North

A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system

Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Multi-step location specific process for substrate edge profile correction for GCIB system

A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.

Method and system for adjusting beam dimension for high-gradient location specific processing

A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

Method and system for multi-pass correction of substrate defects

A method and system of location specific processing on a plurality of substrates is described. The method comprises measuring metrology data for the plurality of substrates. Thereafter, the method comprises computing correction data for a first substrate using the metrology data, followed by computing correction data for a second substrate using the metrology data. While computing the correction data for a second substrate, the method comprises applying the correction data for a first substrate to the first substrate using a gas cluster ion beam (GCIB).

Method and system for increasing throughput during location specific processing of a plurality of substrates

Embodiments of the invention describe methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam and processing workpieces using a gas cluster ion beam. One embodiment includes generating a gas cluster ion beam in a gas cluster ion beam processing apparatus, collecting parametric data relating to the spatial intensity of the gas cluster ion beam, and generating a beam intensity profile describing the spatial intensity of the gas cluster ion beam by fitting a mathematical functional shape to the parametric data. Another embodiment describes a method for processing a workpiece using a gas cluster ion beam.

Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpieces

Method and apparatus for controlling the migration of reaction by-product gases from a chemical vapor deposition (CVD) process chamber to a transfer vacuum chamber shared by other process chambers. Separate regulated flows of purge gas are provided to the CVD process chamber and the transfer vacuum chamber before establishing a pathway for substrate transfer. A pressure differential is created between the transfer vacuum chamber and the CVD process chamber that reduces or prevents the migration of CVD reaction by-product gases arising from the establishment of the substrate transfer pathway. While the pathway is established, a directional flow of purge gas is maintained from the transfer vacuum chamber into the CVD process chamber.

Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers

Apparatus and method of processing a substrate comprises positioning a substrate within a processing space of a processing chamber, and depositing a material layer, such as a titanium-containing layer, onto the substrate using plasma-enhanced chemical vapor deposition. The substrate is then removed from the processing chamber and the processing space is purged. A gas mixture containing oxygen is then introduced into the processing space and the gas mixture is excited with RF energy to form an oxygen-containing plasma. The oxygen-containing plasma is sustained for a predetermined amount of time in the processing space.

Method for stabilizing the internal surface of a PECVD process chamber

A semiconductor device including a silicon-based substrate with recessed features and a tantalum barrier film having at least about 5% silicon incorporated substantially uniformly throughout the film. The device may further include a tantalum barrier film having improved conformality and decreased halogen impurity content. A method for incorporating the silicon into the tantalum barrier layer includes depositing tantalum by PECVD and interrupting deposition at least once to treat the deposited tantalum with a silane containing plasma.

Method for incorporating silicon into CVD metal films

A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.

Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto

A method for improving adhesion of copper films to transition metal based barrier layers. Tantalum or other transition metal based barrier layers are deposited by chemical vapor deposition techniques using transition metal halide precursor materials which generate halogen atom impurities in the barrier layer. The barrier layer is treated with a plasma generated from a nitrogen-containing gas, such as ammonia. Halogen impurity levels are thereby decreased at the surface of the barrier layer. On this surface is subsequently applied a copper film by physical vapor deposition. The copper film exhibits improved adherence to the barrier layer.

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Ashby, MA, United States of America

Steven P Caliendo