Motorola Corporation

Qd Vision, Inc.

Steven Michael Scheifers

Daniel Roman Gamota

Andrew Frederick Skipor

Jie Zhang

Cynthia M Melton

Krishna Kalyanasundaram

Carl J Raleigh

Gregory Joseph Dunn

Lawrence E Lach

Paul W Brazis, Jr

Jerzy Wielgus

Paul Brazis

Abhijit Roy Chowdhuri

Marc Kenneth Chason

Karl W Wyatt

William L Olson

Rick Latella

William M Beckenbaugh

Steven Lewis Wille

Donald H Klosterman

Michael Riess

Michael Hertsberg

Aaron Brown

A backlighting device () emitting light having a first wavelength includes a first radiation emission device (), e.g., an electroluminescent lamp, for emitting radiation having a second wavelength. A layer () of a plurality of photon emitting particles (), e.g., free standing quantum dots or phosphorus particles, emits light having the first wavelength in response to the first radiation emission device (), the first wavelength being larger than the second wavelength. A transparent material () overlies the layer of a plurality of photon emitting particles (), wherein the light having a first wavelength passes through the transparent material (). Optionally, a filter () may be placed over the layer () to block the radiation having a second wavelength, and a scattering layer () may be placed over the layer () to scatter wavelength other than the first wavelength.

Apparatus for selectively backlighting a material

Free standing quantum do (FSQDT) polymer composites and a method and apparatus for patterning the FSQDT polymer composites is provided. The method for patterning the FSQDT polymer composites includes creating a solution including FSQDTs where each of the FSQDTs has a plurality of reactive ligands chemically attached thereto. The method further includes providing a substrate, forming a coated substrate by coating a surface of the substrate with a layer of the solution, and providing a photo mask having a predetermined pattern thereon transparent to a predetermined radiation over the coated substrate. Finally, the method includes exposing a portion of the coated substrate to the predetermined radiation passing through the mask to pattern a polymer matrix in the predetermined pattern while adhering the FSQDTs to the polymer matrix to form the FSQDT polymer composite.

Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites

A semiconductor device comprising organic semiconductor material () has one or more barrier layers () disposed at least partially thereabout to protect the organic semiconductor material () from environment-driven changes that typically lead to inoperability of a corresponding device. If desired, the barrier layer can be comprised of partially permeable material that allows some substances therethrough to thereby effect disabling of the encapsulated organic semiconductor device after a substantially predetermined period of time. Getterers () may also be used to protect, at least for a period of time, such organic semiconductor material.

Encapsulated organic semiconductor device and method

A method for identifying hazardous substances in a printed wiring assembly having a plurality of discrete components, using micro X-ray fluorescence spectroscopy. A micro X-ray fluorescence spectroscopy (&#x3bc;-XRF) and/or X-ray Absorption Fine Structure (XAFS) spectroscopy are used as detecting analyzers, to identify materials of concern in an electronic device. The device or assembly to be examined is analyzed by moving it in the X, Y, and Z directions under a probe in response to information in a reference database, to determine elemental composition at selected locations on the assembly, the probe positioned at an optimum analytical distance from each selected location for analysis. The determined elemental composition at each selected location is then correlated to the reference database, and the detected elements are assigned to the various components in the assembly.

Method for determining chemical content of complex structures using X-ray microanalysis

An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode () and the dielectric layer () to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (), or between the source and drain electrodes () and the organic semiconducting layer.

Organic contact-enhancing layer for organic field effect transistors

A self-joining polymer composition, comprising a polymer, a plurality of amine pendant groups attached to the polymer and a plurality of microcapsules of flowable polymerizable material dispersed in the polymer where the microcapsules of flowable polymerizable material including microcapsules and flowable polymerizable material inside the microcapsules. The microcapsules are effective for rupturing with a failure of the polymer so the flowable polymerizable material cross-links with the reactable pendant groups upon rupture of the microcapsules.

Method and chemistry for automatic self-joining of failures in polymers

A semiconductor device having a flexible or rigid substrate ( ) having a gate electrode ( ), a source electrode ( and ), and a drain electrode ( and ) formed thereon and organic semiconductor material ( and ) disposed at least partially thereover. The gate electrode ( ) has a thin dielectric layer formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Organic semiconductor device having an oxide layer

An integrated circuit ( ) that includes a field effect transistor ( ) is fabricated by forming an organic semiconductor channel ( ) on one substrate ( ), forming device electrodes ( ) on one or more other substrates ( ), and subsequently laminating the substrates together. In one embodiment, a dielectric patch ( ) that functions as a gate dielectric is formed on one of the substrates ( ) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.

Integrated circuit including field effect transistor and method of manufacture

A semiconductor device formed of a flexible or rigid substrate ( ) having a gate electrode ( ), a source electrode ( ), and a drain electrode ( ) formed thereon and organic semiconductor material ( ) disposed at least partially thereover. With appropriate selection of material, the gate electrode ( ) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material ( ) and each of the source electrode ( ) and drain electrode ( ). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Organic semiconductor and method

A microelectronic assembly includes a substrate having a plurality of bond pads disposed on a substantially planar die attach surface and an integrated circuit die having a die face and a plurality of bond pads of the die face. The die is provided with a polymeric bead about the outer edges of the die. Die face bond pads are aligned with corresponding substrate bond pads and electrically interconnected by heating to a reflow temperature. Exposure of the polymeric bead to the reflow temperature causes the bead to form a peripheral bond between the die and the substrate.

Microelectronic assembly with die support and method

A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer. Thereafter, subsequent processing is performed to include the photoimageable layer as a permanent photoimageable layer of a circuit board, with the resistive mass and appropriate terminations forming a resistor in the permanent photoimageable layer.

Method for forming a thick-film resistor and thick-film resistor formed thereby

A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer. Thereafter, subsequent processing is preformed to include the photoimageable layer as a permanent photoimageable layer of a circuit board, with the resistive mass and appropriate terminations forming a resistor in the permanent photoimageable layer.

A portable fuel cell device (10) includes a fuel reservoir (26) and an oxidant chamber (34). Gaseous fuel from the fuel reservoir (26) is mixed with an oxidant from the oxidant chamber (34) by an aspirator (42) to form a fuel-oxidant mixture. The fuel-oxidant mixture is passed through a fuel-oxidant line (44) into a fuel cell (13). The fuel cell (13) contains a reaction chamber (20) that generates electricity by reacting the fuel-oxidant mixture. Waste gaseous products, such as water and carbon dioxide, are sent through an exhaust line (24) to a water trap (46). The water trap (46) contains a water absorbing medium (52) for absorbing the water vapor from the exhaust gas, thereby forming a dry exhaust gas. The dry exhaust gas is released through the exhaust vent (48) into the ambient atmosphere.

Portable fuel cell device including a water trap

A solution (20) is dispensed onto bond pads (18) on a substrate (14). An integrated circuit component (12) that includes solder bumps (16) formed on component bond pads (30) is superposed onto the substrate (14) such that the solder bumps (16) rest against the bond pads (18). The solution (20) includes an anhydride compound that acts as a fluxing agent. The subassembly (11) is heated to a temperature sufficient to bond the solder bumps (16) to the bond pads (18) to form solder bump interconnections (26). During the bonding process, the fluxing agent substantially vaporizes and leaves virtually no residue on the substrate (14) to allow the component (12) to be effectively underfilled with a polymeric encapsulant (24).

Method of holding a component using an anhydride fluxing agent

An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is directly metallurgically bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts.

Growing community of inventors

Hoffman Estates, IL, United States of America

Steven Michael Scheifers