Raytheon Company

Other

Steven Marc Lardizabal

Boris Solomon Jacobson

Jeffrey R LaRoche

Steven D Bernstein

Jason D Adams

John P Bettencourt

Robert S Roeder

Valery S Kaper

Zhaoyang Charles Wang

Matthew C Smith

Lawrence P Dunleavy

Michael G Adlerstein

Thomas E Kazior

Jerome Howard Pozgay

Michael Aidan Gritz

Christopher P McCarroll

Jeffrey R Laroche

Methods and apparatus for an amplifier including first and second transistors coupled in a stacked configuration with first and second current mirrors to provide respective bias signals to the amplifier transistors. A reference transistor is coupled to the first and second current mirrors for referencing the bias signals together.

Amplifier bias circuit

Apparatus and associated methods relate to a low-noise wideband active phase shifter. The low-noise wideband active phase shifter includes first and second transconductance cells, a fixed LC series network and a tunable LC series network configured to form an all-pass lattice network. The first and second transconductance cells, each include a transistor, a feedback network, and a transistor biasing network. The transistor has an input terminal and an output terminal. The negative feedback network electrically couples the input and output terminals of the transistor. The biasing network provides input and output biasing of the transistor. The fixed LC series network connects between the first and the second transconductance cells. The tunable LC series network connects between the first and the second transconductance cells.

Cascaded low-noise wideband active phase shifter

A power converter assembly is provided and includes high quality factor (Q) shield-to-transistor integrated low-inductance capacitor elements to divert common mode (CM) currents, high Q shield-to-shield integrated low-inductance capacitor elements to compliment line-to-line filter capacitors and high Q baseplate integrated low-inductance capacitor elements to attenuate residual CM currents.

Heterogeneously integrated power converter assembly

A circuit having (A) a transistor; (B) a bias circuit for providing setting a bias current for the transistor, the bias current having a current level in accordance with a reference current fed to the bias circuit; and (C) a bias current level controller, comprising: (i) a plurality of switches, each one of the switches comprises: a MOS FET and a GaN FET connected in a cascode configuration; and (ii) current source circuitry, comprising a plurality of current sources, each one of the current sources being connected between a voltage source and a corresponding one of the plurality of switches, the current source circuit combining currents produced by the current source in response a binary control signal fed to a gate of the MOS FET, the combined current providing the reference current fed to the bias circuit.

Amplifier having a switchable current bias circuit

A modular high-power converter system includes an electronic power distribution unit configured to output an analog current (AC) voltage to a power bus, and at least one Transmit or Receive Integrated Microwave Module (T/RIMM) that includes a voltage converter unit and a transmitter and receiver (T/R) unit. The voltage converter unit includes at least one analog-to-digital converter (ADC) to convert the AC voltage into a direct current (DC) voltage having a first DC voltage level. The transmitter and receiver (T/R) unit includes a modular-based DC/DC converter to convert the DC voltage into a second DC voltage having a second voltage. The modular-based DC/DC converter includes a modular power converter unit configured to generate the second DC voltage. The modular converter unit is configured to be independently interchangeable with a different modular converter unit.

Flexible power converter architecture based on interposer and modular electronic units

A method and receiver for detecting a signal wherein the signal is encoded the signal with a pair of spaced predetermined frequencies and wherein energy is detected in each of the pair of predetermined frequencies and in a predetermined frequency between the pair of predetermined frequencies. Energy detected in each of the pair of predetermined frequencies is compared with the energy detected in the predetermined frequency between the pair of predetermined frequencies. The detecting includes passing the encoded signal through narrow band filters, each one of the filters being tuned to a corresponding one of the pair of predetermined frequencies and the predetermined frequency between the pair of predetermined frequencies.

Low power encoded signal detection

A Dicke-switched radiometer including a signal channel comprising of an antenna for receiving an input signal and a first stage amplification circuit for amplifying an output of the antenna and generating an amplified input signal; a reference channel comprising of a resistive load, a second stage amplification circuit and a matching filter for matching a frequency and an impedance of the amplified input signal to a frequency and an impedance of the amplified reference signal; a Dicke switch coupled to first stage amplification circuit and the matching filter for inputting the amplified input signal and an output of the matching filter to generate a difference signal; a third stage amplification circuit coupled to an output of the Dicke switch for amplifying the difference signal; and a detector coupled to an output of the third stage amplification circuit to obtain the amplified difference signal and generate a detected difference signal.

Loss-less frequency dependent dicke-switched radiometer

A method includes providing a single crystal wafer having MMIC chips. Each chip has an active device in a first surface portion of a semiconductor substrate provided by the wafer and an electrical interconnect having a first portion disposed on a second surface of the semiconductor substrate. The semiconductor substrate structure has a via therethrough, a second portion of the electrical interconnect passing though the via and being electrically connected to the active device. A multilayer interconnect structure is formed on the wafer providing a signal routing section on the second surface portion of a corresponding one of the chips. Each section has dielectric layers and an electrical conductor, such electrical conductor being electrically coupled to the active device to route an electrical signal to such active device. Each chip and the corresponding signal routing section are separated from the wafer.

MMIC having back-side multi-layer signal routing

A radiometer calibrating system utilizes an adjustable noise source for calibrating a radiometer. The noise source includes a transistor configured as a noise equivalent circuit having a gate port, drain port and source port. A source inductance providing series feedback for the noise source has one end coupled to the source port of the noise equivalent circuit and another end connected to the ground. A bias circuit controls the amount of DC bias applied to the noise equivalent circuit. In order to match the impedances in the noise source, an output impedance matching network is connected to the drain port and an input impedance matching network is connected to the gate port of the noise equivalent circuit. The output and input impedance networks have an output port and input port, respectively. Included in the noise source is a port switch that terminates a matched load to the output port when a cold thermal radiation temperature is generated at the input port, and alternatively, the port switch terminates the matched load to the input port when the warm thermal radiation temperature is generated at the output port.

Variable microwave cold/warm noise source

A radiometer calibrating system utilizes an adjustable noise source for calibrating a radiometer. The noise source includes a transistor configured as a noise equivalent circuit having a gate port, drain port and source port. A source inductance providing series feedback for the noise source has one end coupled to the source port of the noise equivalent circuit and another end connected to the ground. A bias circuit controls the amount of DC bias applied to the noise equivalent circuit. In order to match the impedances in the noise source, an output impedance matching network in connected to the drain port and an input impedance matching network is connected to the gate port of the noise equivalent circuit. The output and input impedance networks have an output port and input port, respectively. Included in the noise source is a port switch that terminates a matched load to the output port when a cold thermal radiation temperature is generated at the input port, and alternatively, the port switch terminates the matched load to the input port when the warm thermal radiation temperature is generated at the output port.

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Westford, MA, United States of America

Steven Marc Lardizabal