Motorola Corporation

Freescale Semiconductor,inc.

Steven M Smith

David P Mancini

Yi Wei

Douglas J Resnick

Jeffrey H Baker

Diana J Convey

Jon Michael Slaughter

Mark A Durlam

Paige M Holm

Bernard F Coll

Gregory W Grynkewich

Brian R Butcher

Valentin Oprescu-Surcobe

Kelly Wayne Kyler

Craig S Amrine

Raymond Mervin Roop

Juergen A Foerstner

Mark F Deherrera

Janusz Ryszard Hyziak

Steven A Voight

Joyce K Yamamoto

Sang-In Han

Peter A Smith

John J D'Urso

Doug J Resnick

Steve X Dai

Thomas Nilsson

Ngoc V Le

Andy E Hooper

Scott A Zabolotzky

Charles W Snyder

Jaime A Quintero

An apparatus and method is provided for removing smudges () including oils and dust from portable electronic displays. The apparatus comprises a display device () positioned within a housing (), comprising a transparent cover () having a surface () viewable through an opening in the housing () and a susceptibility to receiving contaminants (). A vibration device () is positioned against the transparent cover () to provide motion () in a direction parallel to the surface, thereby causing the contaminants to move () across the surface (). The contaminants () may then be hidden by the housing () or ejected by a motion () perpendicular to the surface by another vibrating device (). Electronic circuitry () is provided for activating the vibration device () either during normal operation of the electronic device or as selected by the user.

Smudge removal from electronic device displays

A method is provided for forming a porous metal catalyst () on a substrate () for nanotube () growth in an emissive display. The method comprises depositing a metal () onto a surface of a substrate () at an angle (&#x398;) to the surface, depositing a metal catalyst () onto the metal (), and forming nanotubes () on the metal catalyst ().

Method of forming a porous metal catalyst on a substrate for nanotube growth

A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (). The method comprises forming a first mirror () over the substrate (). A plurality of etalon material layers () are formed over the mirror (), and a plurality of etch stop layers () are formed, one each between adjacent etalon material layers (). A photoresist is patterned to create an opening () over the top etalon material layer () and an etch () is performed down to the top etch stop layer (). An oxygen plasma () may be applied to convert the etch stop layer () within the opening () to silicon dioxide (). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (). A second mirror () is then formed on each of the levels ().

Integrated multi-wavelength Fabry-Perot filter and method of fabrication

A method for preparing a semiconductor substrate surface () for semiconductor device fabrication, includes providing a semiconductor substrate () having a pure Ge surface layer () or a Ge-containing surface layer (), such as SiGe. The semiconductor substrate () is cleaned using a first oxygen plasma process () to remove foreign matter () from the surface () of the substrate (). The substrate surface () is next immersed in a hydrochloric acid solution () to remove additional foreign matter () from the surface () of the substrate (). The immersion step is followed by a second oxygen plasma etch process (), passivate the surface with a passivation layer (), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

Method for preparing a semiconductor substrate surface for semiconductor device fabrication

A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.

Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication

A pellicle membrane structure ( ) is made by a process that includes depositing ( ) a etch mask layer ( ) on the backside of the semiconductor wafer, deposting ( ) a first pellicle membrane protection layer ( ) on a frontside of the semiconductor wafer, depositing ( ) a layer of membrane material ( ) that is preferably SiOF on the first membrane protection layer, and depositing ( ) a second pellicle membrane protection layer ( ) on the membrane material layer, forming a pattern ( ) for an opening ( ) in the semiconductor, and etching ( ) to form the opening. Oxygen plasma ( ) is then used to remove carbon from the exposed portions of the pellicle membrane protection layers, which are preferably SiCN, which in the preferable embodiment changes the exposed surfaces to SiOF, thereby forming a thin SiOF membrane ( ) over the opening.

Structure and process for a pellicle membrane for 157 nanometer lithography

A method is provided for making a MEMS structure ( ). In accordance with the method, a CMOS substrate ( ) is provided which has interconnect metal ( ) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Low temperature plasma Si or SiGe for MEMS applications

An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

Amorphous carbon layer for improved adhesion of photoresist and method of fabrication

A method of fabricating a MRAM device with a taper comprising the steps of providing a substrate, forming a dielectric region with positioned on the substrate, patterning and isotropically etching through the dielectric region to the substrate to form a trench, depositing the MRAM device within the trench wherein the MRAM device includes a first ferromagnetic region with a width positioned on the substrate, a non-ferromagnetic spacer layer with a width positioned on the first ferromagnetic region, and a second ferromagnetic region with a width positioned on the non-ferromagnetic spacer layer wherein the taper is formed by making the width of the first ferromagnetic region greater than the width of the non-ferromagnetic spacer layer, and the width of the non-ferromagnetic spacer layer greater than the width of the second ferromagnetic region so that the first ferromagnetic region is separated from the second ferromagnetic region.

Magnetoresistive random access memory device and method of fabrication thereof

An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

A method for fabricating a field emission display ( ) includes the steps of providing a cathode plate ( ), providing an anode plate ( ), providing a spacer substrate ( ) made from a bulk spacer material ( ), cutting the spacer substrate ( ) to define a spacer ( ) having a surface ( ), passivating the surface ( ) of the spacer ( ) using the bulk spacer material ( ) to form a passivation layer, and disposing the spacer ( ) between the cathode plate ( ) and the anode plate ( ). A field emission display ( ) which includes a cathode plate ( ) having a plurality of electron emitters ( ), an anode plate ( ) opposing the cathode plate ( ), and a spacer ( ) extending between the cathode plate ( ) and anode plate ( ). The spacer ( ) has a passivation layer made from bulk spacer material ( ).

Method for fabricating a field emission display having a spacer with a passivation layer

In a communication system a method for selecting a set of preferences for use during transmission of information to a particular destination anticipates selecting a list of one or more destinations, each destination having a key and a set of preferences, each preference further having a value. A historical database is indexed via the key to retrieve a set of database entries, each entry having a set of preferences, each preference further having a value. The retrieved database entries are filtered in order to identify those entries exhibiting a predefined set of criteria. After filtering, the preference values within the identified database entries are applied during transmission and subsequent processing of the information.

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Gilbert, AZ, United States of America

Steven M Smith