International Business Machines Corporation

Steven M Mcdermott

Injo Ok

Sanjay C Mehta

Muthumanickam Sankarapandian

Kevin W Brew

Nicole A Saulnier

Timothy Mathew Philip

A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.

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Wynantskill, NY, United States of America

Steven M Mcdermott