International Business Machines Corporation

Steven M Kandetzke

Mark A Takacs

Constance J Araps

Jon Alfred Casey

Renuka S Divakaruni

Daniel P Kirby

John Ulrich Knickerbocker

Sarah Huffsmith Knickerbocker

James N Humenik

Srinivasa S Reddy

Robert W Nufer

John Acocella

George Czornyj

Richard A Bates

Arnold I Baise

Lovell B Wiggins

David R Clarke

Amy T Matts

Charles Hampton Perry

Lawrence D David

Ajay Prabhakar Giri

Anthony Mastreani

Peter A Agostino

Salvatore J Scilla

Liang-Choo Hsia

Werner E Dunkel

Allen J Dam

Ray M Bryant

Raj N Master

Herbert R Anderson, Jr

Catherine A Lotsko

Ellen L Kutner

Chatherine A Lotsko

Joseph M Dynys

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Phenyl-endcapped depolymerizable polymers are disclosed. The phenyl endcap eliminates the reactive terminal vinyl group resulting in increased depolymerization threshold temperatures and reduced residue after depolymerization. A multilevel metal lift-off process using the phenyl-endcapped polymers is disclosed. Additionally, the polymers are improved ceramic glass binder resins.

Phenyl-endcapped depolymerizable polymer

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.

Method of making multilayered ceramic structures having an internal

An electronic component is formed by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomer is selected from the group consisting of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof.

Electronic components comprising polymide dielectric layers

Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with a vinyl and/or acetylenic end groups.

Electronic components comprising polyimide-filled isolation structures

Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with vinyl or acetylenic end groups. The polymerizable oligomer comprises polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof. A process for forming the electronic components comprising the insulator is also disclosed.

Method for forming electrical components comprising cured vinyl and/or

A method of producing electronic components is disclosed wherein an insulator is in situ cured. The insulator is comprised of a polymerizable oligomer end capped with vinyl and/or acetylenic end groups which both imidize and cross-link upon cure to provide a three-dimensional dielectric network.

Method of producing electronic components utilizing cured vinyl and/or

Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomers are comprised of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof which can be crosslinked to form a three-dimensional network via sites at the vinyl or acetylenic end groups and sites at carbonyl groups contained within the polymeric chain. Use of these polymerizable oligomers permits utilization of low temperature methods of curing which reduce intrinsic and extrinsic stress within the cured dielectric film.

Method for forming a film of dielectric material on an electric component

Acetylene or vinyl-terminated polymerizable oligomers of polyamic acid are fractionated to obtain an oligomer product having a molecular weight in the range of 2,000 to 4,000 which exhibits improved wetting and film forming properties. Fractionization is accomplished by dissolving the unfractionated polymerizable oligomer in a solvent in which the desired molecular weight fraction is soluble. The oligomer solution is passed through a filter which removes undissolved material having a molecular weight in excess of the desired molecular weight range. The filtrate is admixed with a hydrocarbon to precipitate the desired molecular weight fraction. Thereafter the collected solids can be redissolved in a ketonic solvent and the fractionation procedure repeated to further improve the molecular weight content of the fractionated oligomer.

Method for the fractionation of reactive terminated polymerizable

A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.

Method for preparation of semiconductor structures and devices which

The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

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Fishkill, NY, United States of America

Steven M Kandetzke