Memc Electronic Materials, Inc.

Steven M Joslin

John D Holder

Harold W Korb

Hariprasad Sreedharamurthy

John Lhamon

A method and system for determining polycrystalline silicon chunk size for use with a Czochralski silicon growing process. Polycrystalline silicon chunks are arranged on a measuring background. A camera captures an image of the chunks. An image processor processes the image and determines the dimensions of the chunks based on the captured image. A size parameter associated with the chunks is determined.

Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski process

A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon.

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St. Peters, MO, United States of America

Steven M Joslin