Osram Opto Semiconductors Gmbh

Pacific Light Technologies Corp.

Steven M Hughes

Juanita N Kurtin

Georgeta Masson

Matthew J Carillo

Oun-Ho Park

Brian Theobald

Alex C Mayer

Oun Ho Park

Alex R Guichard

Paul-Emile B Trudeau

Colin C Reese

Manav Sheoran

Alex Christopher Mayer

Shawn Scully

Shawn R Scully

Colin Reese

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix

The light conversion efficiency of a solar cell is enhanced by using an optical downshifting layer in cooperation with a photovoltaic material. The optical downshifting layer converts photons having wavelengths in a supplemental light absorption spectrum into photons having a wavelength in the primary light absorption spectrum of the photovoltaic materiaL The cost effectiveness and efficiency of solar cells platforms can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic materiaL The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response to the photovoltaic materiaL The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.

Optical downshifting layer

The light conversion efficiency of a solar cell () is enhanced by using an optical downshifting layer () in cooperation with a photovoltaic material (). The optical downshifting layer converts photons () having wavelengths in a supplemental light absorption spectrum into photons () having a wavelength in the primary light absorption spectrum of the photovoltaic material. The cost effectiveness and efficiency of solar cells platforms () can be increased by relaxing the range of the primary light absorption spectrum of the photovoltaic material. The optical downshifting layer can be applied as a low cost solution processed film composed of highly absorbing and emissive quantum dot heterostructure nanomaterial embedded in an inert matrix to improve the short wavelength response of the photovoltaic material. The enhanced efficiency provided by the optical downshifting layer permits advantageous modifications to the solar cell platform that enhances its efficiency as well.

A solar concentrator module () employs a luminescent concentrator material () between photovoltaic cells () having their charge-carrier separation junctions () parallel to front surfaces () of photovoltaic materialof the photovoltaic cells (). Intercell areas () covered by the luminescent concentrator material () occupy from 2 to 50% of the total surface area of the solar concentrator modules (). The luminescent concentrator material () preferably employs quantum dot heterostructures, and the photovoltaic cells () preferably employ low-cost high-efficiency photovoltaic materials (), such as silicon-based photovoltaic materials.

Quantum dot and luminescent material made therefrom

Squared-off semiconductor coatings for quantum dots (QDs) and the resulting quantum dot materials are described. In an example, a semiconductor structure includes a quantum dot structure having an outermost surface. A crystalline semiconductor coating is disposed on and completely surrounds the outermost surface of the quantum dot structure. The crystalline semiconductor coating has a geometry with squared-off ends.

Squared-off semiconductor coatings for quantum dots (QDs)

Composite having semiconductor structures including a nanocrystalline core and shell

Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

Composite having semiconductor structure including a nanocrystalline core and shell embedded in a matrix

Solar module employing quantum luminescent lateral transfer concentrator

Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.

Group I-III-VI material nano-crystalline core and group I-III-VI material nano-crystalline shell pairing

Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, semiconductor material at least partially surrounds the nano-crystalline core. In one specific example, the nano-crystalline core/nano-crystalline shell pairing has a photoluminescence quantum yield (PLQY) of greater than 60%. In another specific example, the nano-crystalline core/nano-crystalline shell pairing is a Type I hetero-structure.

Nano-crystalline core and nano-crystalline shell pairing having group I-III-VI material nano-crystalline core

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core.

Semiconductor structure having nanocrystalline core and nanocrystalline shell

A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.

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Walla Walla, WA, United States of America

Steven M Hughes