Advanced Technology Materials, Inc.

Entegris, Inc.

Steven M Bilodeau

Jeffrey F Roeder

Thomas H Baum

Emanuel Israel Cooper

Peter C Van Buskirk

Chongying Xu

Bryan Clark Hendrix

Michael W Russell

Daniel J Vestyck

Stephen T Johnston

Hsing-Chen Wu

Min-Chieh Yang

Karl E Boggs

William Hunks

Daniela White

James J Welch

SeongJin Hong

Joseph D Sweeney

Jose I Arno

Tianniu Chen

Michael L White

Luping Wang

J Donald Carruthers

Peng Zou

Jeffrey A Barnes

Ing-Shin Barry Chen

Weimin Li

Shaun M Wilson

Paul J Marganski

Sheng-Hung Tu

Brian Bobita

YoungMin Kim

Douglas Edwards

Michael B Korzenski

Scott L Battle

Frank DiMeo, Jr

Alexander S Borovik

Ping Jiang

WonLae Kim

Kim Van Berkel

George Mirth

Juhee Yeo

Thomas Parson

Sean Kim

Jaeseok Lee

Min-chieh Yang

Abigail Ebbing

Ralph J Carl, Jr

Claudia Yevenes

Wen-Haw Dai

Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

Formulations to selectively etch silicon-germanium relative to silicon

The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

Compositions and methods for selectively etching silicon nitride films

The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

Wet etching composition and method

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Silicon nitride etching composition and method

Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

Composition and process for selectively etching p-doped polysilicon relative to silicon nitride

Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

Formulations to selectively etch silicon germanium relative to germanium

Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

Compositions and methods for etching silicon nitride-containing substrates

Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

Formulations to selectively etch silicon and germanium

A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

Use of non-oxidizing strong acids for the removal of ion-implanted resist

Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Ni:NiGe:Ge selective etch formulations and method of using same

Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

Passivation of germanium surfaces

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Fairfield, CT, United States of America

Steven M Bilodeau