Masimo Semiconductor, Inc.

Spire Corporation

Steven J Wojtczuk

Xuebing Zhang

Roger G Little

James G Moe

William Jack MacNeish, Iii

Michael Timmons

Philip T Chiu

William J MacNeish

Edward Gagnon

Massi Joe E Kiani

Brad M Siskavich

Nasser H Karam

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

Enhanced visible near-infrared photodiode and non-invasive physiological sensor

Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.

Pool solar power generator

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Bifacial tandem solar cells

Method of fabricating bifacial tandem solar cells

The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

Nanophotovoltaic devices

A heteroepitaxial semiconductor device having reduced density of threading dislocations and a process for forming such a device. According to one embodiment, the device includes a substrate which is heat treated to a temperature in excess of 1000.degree. C., a film of arsenic formed on the substrate at a temperature between 800.degree. C. and 840.degree. C., a GaAs nucleation layer of less than 200 angstroms and formed at a temperature between about 350.degree. C. and 450.degree. C., and a plurality of stacked groups of layers of InP, wherein adjacent InP layers are formed at different temperatures.

Reduction of dislocations in a heteroepitaxial semiconductor structure

Growing community of inventors

Lexington, MA, United States of America

Steven J Wojtczuk