The United States of America As Represented by the Administrator of the

Steven H Lin

Jae H Kim

Demetri Psaltis

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in a GaAs integrated circuit and exhibiting high differential optical gain and low power consumption. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field-effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy or 38 pJ. Power consumption is 2.4 mW and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 .mu.W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate, controls the threshold.

GaAS-based optoelectronic neurons

High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) (14) and Darlington phototransistor pairs (14, 16) are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base (22) doping level used herein results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransistor pairs of this material can achieve a current gain of over 6,000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ novel neurons (10) comprising the Darlington phototransistor pair in series with a light source (12).

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Temple City, CA, United States of America

Steven H Lin