International Business Machines Corporation

Other

Dongbu Electronics, Co. Ltd.

Infineon Technologies North America Corp.

Steven H Boettcher

Andrew Herbert Simon

Yun-Yu Wang

Panayotis Constantinou Andricacos

Christopher Carr Parks

Cyprian Emeka Uzoh

Fenton Read McFeely

John Gerard Gaudiello

Patrick William Dehaven

Milan Paunovic

Leon J Kimball

Soon-Cheon Seo

Hariklia Deligianni

Herbert Lei Ho

Hyun K Lee

Kwong Hon Wong

Anthony Gene Domenicucci

Mark Hoinkis

Erick G Walton

Allan C VanDeventer

Wilma Jean Horkans

Peter Stevens Locke

Jay A Bunt

Keith Thomas Kwietniak

Hongqing Zhang

Madhana Sunder

James Edward Fluegel

Joyce E Molinelli Acocella

Dean S Chung

Keith E Barton

Thomas A Bauer

Jeffrey S McMurray

Heather Nicole Polgrean

Hyun Koo Lee

A device that comprises an outer component, an inner component and a filter module. The outer component includes a first hollow cylinder, and exterior ports in sidewalls of the first hollow cylinder. The inner component is positioned coaxially within the first hollow cylinder, and includes a second cylinder, and interior ports in the second cylinder, wherein the interior fluid ports are aligned parallel to the exterior ports. The filter module includes a hollow prism positioned coaxially within the outer component and surrounding the inner component, the hollow prism comprising at least four faces configured to retain filters. The filter module also includes vanes positioned along edges connecting the at least four faces and forming seals with the first hollow cylinder. A first filter is provided on a first face, of the at least four faces, which is aligned between a pair of the interior and exterior ports.

Filter device having multiple changeable filter surfaces

A high quality electron microscopy sample suitable for electron holography is prepared by forming markers filled with TEOS oxide and by repeatedly applying multiple coats of an adhesive followed by a relatively low temperature cure after each application. The TEOS oxide marker is readily visible during the polish, has a similar polish rate as a semiconductor material, and reduces contamination during sample preparation. The repeated application of adhesives separated by relatively low temperature cures increases the adhesive strength of the adhesive material to the semiconductor material without making it too brittle. This results in an improved control and yield of the sample preparation process.

Method of TEM sample preparation for electron holography for semiconductor devices

Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 &#x3bc;m and via openings filled with electroplated copper than is substantially free of internal seams or voids.

Electroplated copper interconnection structure, process for making and electroplating bath

A method for preparing a transmission electron microscopy (TEM) sample for electron holography includes forming a sacrificial material over an area of interest on the sample, and polishing the sample to a desired thickness, wherein the area of interest is protected from rounding during the polishing. The sacrificial material is removed from the sample following the polishing.

Transmission electron microscopy sample preparation method for electron holography

An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; a barrier layer located in the via opening; an interlayer of palladium and/or platinum on the barrier layer; and a layer of copper or copper alloy on the interlayer is provided.

Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof

An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.

Electromigration-resistant copper microstructure

Copper is deposited onto a barrier layer such as tungsten from an electroless copper plating bath having a pH of at least 12.89 and a deposition rate of 50 nanometers/minute or less.

Method for depositing copper onto a barrier layer

In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Ti, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while reducing the increase in resistance caused by alloying between the Ti and the Copper to an acceptable amount.

Copper vias in low-k technology

Electromigration-resistant copper microstructure and process of making

Growing community of inventors

Fishkill, NY, United States of America

Steven H Boettcher