The Silanna Group Pty Ltd

Silanna Uv Technologies Pte Ltd

Steven Grant Duvall

Petar Branko Atanackovic

Yashodhan Vijay Moghe

Andrew Terry

Norbert Krause

Christopher Flynn

Andrew James Read

Mark Hiscocks

Matthew Stewart

Various ultraviolet (UV) reactors and their methods of fabrication are disclosed. One exemplary process comprises forming a set of parallel channels in a slab of ultraviolet transparent material. The process also comprises providing a reactor substrate with an input manifold and an output manifold. The process also comprises joining the slab of ultraviolet transparent material and the reactor substrate. The input manifold, output manifold, and set of parallel channels are in fluid communication after the joining step. The process also comprises providing a planar ultraviolet light source isolated from the set of parallel channels by the shaped slab of ultraviolet-transparent material. The set of parallel channels and a defining plane of the planar ultraviolet light source are parallel in the assembled ultraviolet reactor.

Ultraviolet reactor with planar light source

An integrated circuit, including at least two integrated circuit portions mutually spaced on a single electrically insulating die and at least one coupling region on the die to provide capacitive coupling between the otherwise mutually isolated integrated circuit portions, the integrated circuit portions being formed by a plurality of layers on the single die, the layers including metal and dielectric layers and at least one semiconductor layer; wherein at least one of the dielectric layers extends from the integrated circuit portions across the coupling region and at least a corresponding one of the metal layers and/or at least one semiconductor layer extends from each of the integrated circuit portions and partially across the coupling region to form capacitors therein and thereby provide the capacitive coupling between the integrated circuit portions.

Single-chip integrated circuit with capacitive isolation and method for making the same

An optoelectronic device, including a semiconductor body having a surface to receive photons and a plurality of doped regions of opposite doping polarities, the doped regions extending substantially from the surface of the semiconductor body and into the semiconductor body, and being arranged in one or more pairs of opposite doping polarities such that each pair of doped regions forms a corresponding space charge region having a corresponding electric field therein, the space charge region extending substantially from the surface of the semiconductor body and into the semiconductor body such that photons entering the semiconductor body through the surface and travelling along paths within the space charge region generate electron-hole pairs in the space charge region that are separated in opposing directions substantially orthogonal to the photon paths by the electric field and collected by the corresponding pair of doped regions, thereby providing an electrical current to be conducted from the device.

Optoelectronic device with lateral pin or pin junction

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Milsons Point, Australia

Steven Grant Duvall