Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Thomas Richard Gaffney

Shankar Nataraj

Jeffrey Richard Brzozowski

Brian Thomas Carvill

Steven Gerard Mayorga

Jeffrey Raymond Hufton

Manchao Xiao

Xinjian Lei

Mark Leonard O'Neill

Thomas R Gaffney

Haripin Chandra

Anupama Mallikarjunan

Kelly Ann Chandler

Daniel P Spence

Ronald Martin Pearlstein

Bing Han

Heather Regina Bowen

Robert George Syvret

Dino Sinatore

Mary Kathryn Haas

Timothy Christopher Golden

Scott Jeffrey Weigel

Raymond Nicholas Vrtis

Madhukar Bhaskara Rao

Robert Gordon Ridgeway

Meiliang Wang

Richard Ho

Fred William Taylor

Hareesh Thridandam

Neil Osterwalder

Stuart H Dimock

Mark Leonard O'neill

A method for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.

High purity ethylenediamine for semiconductor applications

A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RSiRwherein R is selected a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Ccyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

Stable alkenyl or alkynyl-containing organosilicon precursor compositions

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Methods for depositing films with organoaminodisilane precursors

Organoaminodisilane precursors and methods for depositing films comprising same

A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R(RO)Si&#x2014;R&#x2014;Si(OR)Rand a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si&#x2014;R&#x2014;Si(OR)Rwherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process

A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si&#x2014;N bond, a Si&#x2014;Si bond, and a Si&#x2014;Hgroup represented by the following Formula I below: wherein Rand Rare defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.

The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

Low-impurity organosilicon product as precursor for CVD

A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer. A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.

Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor

A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I),R,R,R,R,R(C)OH&#x2003;&#x2003;Formula (I) A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.

Process stability of NBDE using substituted phenol stabilizers

A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.

A method of removing trace levels of arsenic-containing impurities from raw triethylphosphate (TEPO) is disclosed. The method uses adsorption, or adsorption followed by a flash distillation. The method comprises contacting raw triethylphosphate (TEPO) with an adsorbent which selectively adsorbs the arsenic-containing impurities in the raw triethylphosphate (TEPO). The adsorbent is a base promoted alumina containing adsorbent represented by a formula: ZWwhere x is the weight percentage of Z in the adsorbent ranging from 30% to 99.999%; y is the weight percentage of W in the adsorbent, and x+y=100%; Z is selected from the group consisting of alumina (AlO), magnesium-alumina based layered double hydroxide (MgO&#x2014;AlO), alumina-zeolite, and mixtures thereof; and W is selected from the group consisting of at least one basic metal oxide, at least one basic metal carbonate, and mixtures thereof. The method will result in a final triethylphosphate (TEPO) with a few ppb to less than 1 ppb arsenic containing impurities.

Removal of trace arsenic impurities from triethylphosphate (TEPO)

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Oceanside, CA, United States of America

Steven Gerard Mayorga