Micron Technology Incorporated

Micron Semiconductor, Inc.

Steven G Renfro

Timothy B Cowles

Gary R Gilliam

Roland Ochoa

James S Cullum

Craig E Schneider

Kacey Cutler

A method and apparatus are disclosed for adjusting the individual data hold time of data output buffers. Clock signals for the output buffers are respectively and individually adjusted for each of the output buffers to ensure a desired timing relationship among all of the data output by the buffers.

Method and apparatus for adjusting data hold timing of an output circuit

An inventive programmable circuit stores a bit (i.e., a '1'or a '0') as the result of one of a pair of anti-fuses of the circuit connected in series between a supply voltage V.sub.cc and ground V.sub.ss being blown. If the anti-fuse connected to the supply voltage V.sub.cc is blown, the supply voltage V.sub.cc passes through the anti-fuse to a node between the series-connected anti-fuses. If, instead, the anti-fuse connected to ground V.sub.ss is blown, the node between the anti-fuses is connected to ground through the blown anti-fuse. The voltage on the node (i.e., V.sub.cc or V.sub.ss) may then be output from the programmable circuit as being representative of the bit stored in the circuit. Because only one of the anti-fuses is blown, no direct path exists between the supply voltage V.sub.cc and ground V.sub.ss, so the programmable circuit does not waste current as prior circuits are known to do. The programmable circuit is particularly useful in storing the memory addresses of memory cells in a memory device that are to be replaced by redundant cells.

Low current redundancy anti-fuse assembly

An apparatus, system and method for identifying an access mode of a semiconductor memory in a data processing system, characterized by significant reduction of the possibility of erroneous identification of the access mode. A semiconductor memory has an access circuit bank with plurality of selectable circuits only one of which is activated, each selectable circuit respectively associated with a selectable semiconductor memory access mode, the access mode selection typically being accomplished by selectively blowing fuses associated with the corresponding selectable circuits. A semiconductor memory access mode is correctly identified by associating, in response to a test signal for determining the fuse status, the respective activated selectable circuit with its corresponding access mode.

Apparatus, system and method for identifying semiconductor memory access

In a microcircuit device such as a memory chip, where a bank of fuse-controlled latch pulse routing-circuits are used to program redundant circuits or other programming options with every memory cycle or multiple thereof, the amount of current drawn by every fuse-control circuit is reduced by controlling each bank of circuits with a bank-enabling, fuse-programmed circuit between the latch pulse source and the bank of fuse-controlled programing circuits, and by adding a second fuse into each programming circuit; whereby, the bank of programming circuits can be enabled by alternately blowing one of two fuses in the bank-enabling circuit, and each programing logic can be set by alternately blowing one of its pair of fuses, thus cutting off any current path through the programming circuit regardless of the programming state of the circuit.

Low current redundancy fuse assembly

In a microcircuit device such as a memory chip, where a bank of fuse-controlled latch pulse routing-circuits are used to program redundant circuits or other programming options with every memory cycle or multiple thereof, the amount of current drawn by every fuse-control circuit is reduced by controlling each bank of circuits with a bank-enabling, fuse-programmed circuit between the latch pulse source and the bank of fuse-controlled programing circuits, and by adding a second fuse into each programing circuit; whereby, the bank of programming circuits can be enabled by alternately blowing one of two fuses in the bank-enabling circuit, and each programming logic can set by alternately blowing one of its pair of fuses thus cutting off any current path through the programing circuit regardless of the programing state of the circuit.

In a microcircuit device such as a memory chip, where a bank of fuse-controlled latch pulse routing-circuits are used to program redundant circuits or other programming options with every memory cycle or multiple thereof, the amount of current drawn by every fuse-control circuit is reduced by controlling each bank of circuits with a bank-enabling, fuse-programmed circuit between the latch pulse source and the bank of fuse-controlled programming circuits, and by adding a second fuse into each programming circuit; whereby, the bank of programing circuits can be enabled by alternately blowing one of two fuses in the bank-enabling circuit, and each programming logic can set by alternately blowing one of its pair of fuses thus cutting off any current path through the programming circuit regardless of the programming state of the circuit.

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Boise, ID, United States of America

Steven G Renfro