Motorola Corporation

Freescale Semiconductor,inc.

Nxp USA, Inc.

Steven G H Anderson

Mehul D Shroff

Ramachandran Muralidhar

Mark Douglas Hall

Gowrishankar L Chindalore

Olubunmi O Adetutu

Craig T Swift

William James Taylor, Jr

Robert F Steimle

Jane A Yater

A semiconductor device includes a substrate, first electronic circuitry formed on the substrate, a first diode buried in the substrate under the first electronic circuitry, and a first fault detection circuit coupled to the first diode to detect energetic particle strikes on the first electronic circuitry.

Semiconductor device with upset event detection and method of making

Nanoclusters are blanket deposited on an integrated circuit and then removed from regions where the nanoclusters are not desired. A sacrificial layer is formed in those regions where the nanoclusters are not desired prior to the blanket deposition. The nanoclusters and the sacrificial layer are then removed. In one form, the sacrificial layer includes a deposited nitride containing or oxide containing layer. Alternatively, the sacrificial layer includes at least one of a pad oxide or a pad nitride layer previously used to form isolation regions in the substrate. Nanocluster devices and non-nanocluster devices may then be integrated onto the same integrated circuit. The use of a sacrificial layer protects underlying layers thereby preventing the degradation of performance of the subsequently formed non-nanocluster devices.

Method for removing nanoclusters from selected regions

A method of forming a conductive structure having a length that is less than the length define by photolithographic patterning. A silicon layer () is formed in a MeOx dielectric layer () is photolithographically patterned to a predetermined first length. A metal layer () is formed conformally to at least the sidewalls of the silicon layer and then is reacted with the silicon to form a metal silicide (). In particular, metal silicide abutments () are formed contiguous to sidewalls () of a reduced conductor (). The remaining metal layer and the metal silicide are etched away, resulting in a conductor having predetermined second length that is less than the predetermined first length.

Method for forming an electronic structure using etch

Growing community of inventors

Austin, TX, United States of America

Steven G H Anderson