Element Six Gmbh

Element Six Technologies Limited

Steven Edward Coe

Geoffrey Alan Scarsbrook

Christopher John Howard Wort

John Robert Brandon

Joseph Michael Dodson

Jonathan James Wilman

Daniel James Twitchen

Timothy Peter Mollart

Charles Simon James Pickles

Alexander Lamb Cullen

Matthew Lee Markham

Ian Friel

Carlton Nigel Dodge

Christopher Wort

Paul Nicolas Inglis

Christopher John Wort

Rizwan Khan

Katharine Robertson

Charles Simon Pickles

Daniel Twitchen

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

Microwave plasma reactor for manufacturing synthetic diamond material

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cmper minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising:

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Eelectric field profile across the growth surface in use, the localized axisymmetric Eelectric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Eelectric field variation of no more than &#xb1;10% of a central Eelectric field strength, the ring of higher electric field being disposed around the central portion and having a peak Eelectric field strength in a range 10% to 50% higher than the central Eelectric field strength.

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Ascot, United Kingdom

Steven Edward Coe