Lsi Logic Corporation

Lsi Corporation

Steven E Reder

Michael J Berman

Hemanshu D Bhatt

Rennie G Barber

Bruce Joseph Whitefield

Matthew R Trattles

Zachary A Prather

Preston E Pillow

Derryl D Allman

Ynhi Thi Le

Hiroshi Mizuno

Mark I Mayeda

Richard C Gimmi

Attila Balazs

Paul Szasz

Russell Whaley

William L Emery

A device and method wherein a thermo electric generator device is disposed between stacks of a multiple level device, or is provided on or under a die of a package and is conductively connected to the package. The thermo electric generator device is configured to generate a voltage by converting heat into electric power. The voltage which is generated by the thermo electric generator can be recycled back into the die itself, or to a higher-level unit in the system, even to a cooling fan.

Method for heat dissipation on semiconductor device

An electroplating tool for providing a metal or metal film on a semiconductor wafer during processing thereof has a wafer chucking mechanism with a conductor or conductors associated therewith. The conductor(s) are electrically connected to a controller that applies a voltage or current applied thereto for altering the position of and/or varying the intensity of electromagnetic field lines originating from a source anode of the electroplating tool. The electromagnetic field lines originating from the source anode direct the deposition of metal from the electroplating solution to the semiconductor wafer. The conductor(s) of the wafer chucking mechanism improve and/or modulate the electromagnetic field lines of the electroplating process. This provides greater control of metal deposition during the electroplating process such that uniformity of the metal (e.g. copper) is provided across the semiconductor wafer.

Electroplating tool for semiconductor manufacture having electric field control

A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an outer wall extending along a first axis. A torch injector extends into the torch chamber at a first end of the torch chamber. The torch injector includes at least one gas intake port for receiving at least one gas and a gas injector section for expelling the at least one gas into the torch chamber. A gas outlet section is disposed at a second end of the torch chamber. The gas outlet section includes a first tubing member disposed along a second axis and a gas outlet port connected to the first tubing member. The gas outlet port of the gas outlet section engages the gas inlet port of the reactor. The torch chamber, the torch injector, and the gas outlet section of the gas delivery system are formed into a unitized structure with no resealable connections between them.

Reactor system

A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.

Method to monitor pad wear in CMP processing

A device for measuring resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process. The device includes a substrate and a conductive pattern on the substrate. The conductive pattern is electrically contactable with the electrical contacts of the contact ring. Resistance measurement circuitry is connected to the conductive pattern. The resistance measurement circuitry is configured to send test signals to the conductive pattern, receive signals from the conductive pattern, and measure the resistances associated with the electrical contacts of the contact ring. A method of using such a device to measure resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process is also provided.

Contact resistance device for improved process control

A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.

Method to improve the control of electro-polishing by use of a plating electrode an electrolyte bath

According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.

Mechanism for improving the structural integrity of low-k films

A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.

Method and control system for improving CMP process by detecting and reacting to harmonic oscillation

A system for thinning a layer on a substrate without damaging a delicate underlying layer in the substrate. The system includes means for mechanically eroding the layer on the substrate, and means for electropolishing the layer on the substrate. In this manner, portions of the layer that cannot be removed by electropolishing can be removed by the mechanical erosion. However, electropolishing can preferentially be used on some portions of the layer so that unnecessary mechanical stresses can be avoided. Thus, the system imparts less mechanical stress to the substrate during the removal of the layer, and the delicate underlying layer receives less damage during the process, and preferably no damage whatsoever.

Chemical mechanical electropolishing system

A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Method to use a laser to perform the edge clean operation on a semiconductor wafer

Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.

Laminate low K film

A plasma edge cleaning apparatus is configured to remove film deposits from a wafer edge. A gas distribution manifold is annular shaped and positioned to provide plasma process gases near the edge of the wafer. A top insulator and a wafer support each include a magnetic coil to generate a magnetic field for shielding the selected portions of a wafer from the generated plasma. The top insulator is positioned above the wafer during edge processing so as to form a small gap between the top insulator and the wafer to prevent plasma from etching active die areas of the wafer.

Method and apparatus for cleaning deposited films from the edge of a wafer

A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxide from the active areas and selectively growing an epitaxial silicon layer.

Method for the formation of active area utilizing reverse trench isolation

According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.

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Boring, OR, United States of America

Steven E Reder