Sunpower Corporation

Apple Inc.

Kovio, Inc.

Thin Film Electronics Asa

Synaptics Corporation

Will Semiconductor (shanghai) Co. Ltd.

Steven E Molesa

Paul Loscutoff

Patrick Smith

Arvind Kamath

Kahn Wu

Erik C Scher

Sunggu Kang

Taeseok Kim

Paul Wickboldt

Jaein Choi

Sandeep Chalasani

David D Smith

Michael T Morse

Mahdi Farrokh Baroughi

Ann P Waldhauer

Xin Zhao

Xia Li

James Montague Cleeves

Hopil Bae

Paolo Sacchetto

Vivek Subramanian

Abbas Jamshidi Roudbari

Warren S Rieutort-Louis

Joerg Rockenberger

Young Seen Lee

Marc Joseph DeVincentis

Patrick A Worfolk

Erik Jonathon Thompson

Gregory Lewis Dean

Jaswinder S Jandu

Criswell Choi

Aditi Chandra

Steven M Kraft

Scott Harrington

Richard Klenkler

Junbo Wu

Hairong Tang

Tiffany T Moy

Francois R Jacob

Ikuo Mori

Zuoqian Wang

Genevieve A Solomon

Jonathan P Mar

Ian D Tracy

Jui-Chih Liao

Paul Stephen Drzaic

Cheng Kai Chen

Giovanni Gozzini

Rui Liu

Chun-Yao Huang

Mohammad Yeke Yazdandoost

Richard Hamilton Sewell

Lei Yuan

Thomas Pass

Wenzhuo Guo

Jungmin Lee

Andrew C Lin

Graham Butler Myhre

Enkhamgalan Dorjgotov

James E Pedder

Vladimir K Dioumaev

Zhen Zhang

Young Cheol Yang

Oray Orkun Cellek

Izhar Zahoor Ahmed

Ben-Li Sheu

Ivan Knez

Lai Wang

Michael K Kocsis

Giovanni Carbone

Sheng Sun

Cheuk Chi Lo

Dmitry Karshtedt

Chun-Ming Tang

Michael Slootsky

Stanley B Wang

Paul S Drzaic

Gloria Wong

Hitoshi Yamamoto

Kwang Ohk Cheon

Wendi Chang

Xiaofan Niu

KiBeom Kim

Yong Sun

Anshi Liang

Elmar Gehlen

Yongjie Jiang

Steve Kraft

Han-Chieh Chang

Timothy D Dennis

Joy M Johnson

Anatole Huang

Mittul Gupta

Andrew H Lin

An electronic device display may have pixels formed from crystalline semiconductor light-emitting diode dies, organic light-emitting diodes, or other pixel structures. The pixels may be formed on a display panel substrate. A display panel may extend continuously across the display or multiple display panels may be tiled in two dimensions to cover a larger display area. Interconnect substrates may have outwardly facing contacts that are electrically shorted to corresponding inwardly facing contacts such as inwardly facing metal pillars associated with the display panels. The interconnect substrates may be supported by glass layers. Integrated circuits may be embedded in the display panels and/or in the interconnect substrates. A display may have an active area with pixels that includes non-spline pixels in a non-spline display portion located above a straight edge of the display and spline pixel in a spline display portion located above a curved edge of the display.

Electronic devices with borderless displays

A micro-light-emitting diode (LED) display includes a number of micro-LED pixel elements and multiple optical sensors integrated with the micro-LED pixel elements. A transparent conductor layer is disposed over the micro-LED pixel elements and optical sensors.

Embedded optical sensors in a micro-led display

A display may be formed by an array of light-emitting diodes mounted to the surface of a display substrate. The light-emitting diodes may be inorganic light-emitting diodes formed from separate crystalline semiconductor structures. An array of pixel control circuits may be used to control light emission from the light-emitting diodes. Each pixel control circuit may be configured to control one or more respective passive matrices. To control partial pixel cells in the display, a donor pixel control circuit in a partial pixel cell may control the pixels in a receptor partial pixel cell without a pixel control circuit. To mitigate the size of an inactive area of the display, fanout signal lines for the display may be formed in the light-emitting active area of the display. The fanout signal lines may be formed between a row of pixel control circuits and a bottom edge of the light-emitting active area.

Local passive matrix displays

To extract light from a light-emitting diode (and thereby improve efficiency of the display), a microlens stack may be formed over the light-emitting diode. The microlens stack may include an array of microlenses that is covered by an additional single microlens. Having stacked microlenses in this way increases lens power without increasing the thickness of the display. The array of microlenses may be formed from an inorganic material whereas the additional single microlens may be formed from an organic material. The additional single microlens may conform to the upper surfaces of the array of microlenses. An additional low-index layer may be interposed between the light-emitting diode and the array of microlenses. A diffusive layer may be formed around the light-emitting diode to capture light emitted from the light-emitting diode sidewalls.

Light-emitting diode display pixels with microlens stacks over light-emitting diodes

Fingerprint sensors include a plurality of optical sensor elements, a collimator filter disposed above the plurality of optical sensor elements, and a display disposed above the collimator filter, wherein the display is a fingerprint imaging light source. The collimator filter has a plurality of apertures, and the plurality of optical sensor elements is configured to receive light transmitted through one aperture of the plurality of apertures.

Optical fingerprint sensor

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, the pixel definition layer may disrupt continuity of the OLED layers. The pixel definition layer may have a steep sidewall, a sidewall with an undercut, or a sidewall surface with a plurality of curves to disrupt continuity of the OLED layers. A control gate that is coupled to a bias voltage and covered by gate dielectric may be used to form an organic thin-film transistor that shuts the leakage current channel between adjacent anodes on the display.

Organic light-emitting diode display with reduced lateral leakage

Systems and methods for optical imaging are disclosed. The optical fingerprint sensor includes an image sensor array; a collimator filter layer disposed above the image sensor array, the collimator filter layer having an array of apertures; and an illumination layer disposed above the collimator filter layer. The collimator filter layer filters reflected light such that only certain of the reflected light beams reach optical sensing elements in the image sensor array. Employing the collimator filter layer prevents blurring while allowing for a lower-profile image sensor.

A biometric imager may comprise a plurality of sensor element traces formed in or on a sensor substrate which may comprise at least a portion of a display screen defining a biometric sensing area and forming in-active pixel locations; an auxiliary active circuit formed in or on the sensor substrate on the periphery of the biometric sensing area and in direct or indirect electrical contact with the sensor element traces; and providing a signal processing interface to a remotely located controller integrated circuit. The sensor element traces may form a portion of one dimensional linear sensor array or pixel locations in a two dimensional grid array capacitive gap biometric imaging sensor. The auxiliary circuit may provide pixel location selection or pixel signal amplification. The auxiliary circuit may be mounted on a surface of the display screen. The auxiliary circuit further comprising a separate pixel location selection controller circuit.

Signal strength enhancement in a biometric sensor array

Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

Dopant ink composition and method of fabricating a solar cell there from

Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Solar cell emitter region fabrication using silicon nano-particles

Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate having a surface with a plurality of grooves and ridges. A first doped region of a first conductivity type is disposed in a first of the grooves. A second doped region of a second conductivity type, opposite the first conductivity type, is disposed in a second of the grooves. The first and second grooves are separated by one of the ridges.

Solar cell with doped groove regions separated by ridges

Diffusion regions of a solar cell are formed using a blanket layer of film that is doped with dopants of a first conductivity type. Dopants of a second conductivity type are implanted in select regions of the blanket layer of film to form dopant source regions of the second conductivity type. Diffusion regions of the solar cell are formed by diffusing dopants of the first conductivity type and dopants of the second conductivity type from the blanket layer of film into an underlying silicon material. The blanket layer of film may be a P-type dopant source layer doped with boron, with phosphorus being implanted in select regions of the P-type dopant source layer to form N-type dopant source regions in the P-type dopant source layer.

Ion implantation of dopants for forming spatially located diffusion regions of solar cells

A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (HSO), acetic acid (CHCOOH), nitric acid (HNO), hydrofluoric acid (HF) or phosphoric acid (HPO). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.

Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication

Growing community of inventors

San Jose, CA, United States of America

Steven E Molesa