Group IV Semiconductor, Inc.

Steven E Hill

Iain D Calder

Thomas Macelwee

George Chik

An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.

Engineered structure for solid-state light emitters

A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are either combined in a single layer or in individual layers that produce the required Red, Green, and Blue (RGB) emission to form a white light.

Solid state white light emitter and display using same

The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, and a composite material comprising a matrix in which is dispersed a doped semiconductor powder.

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Castle Rock, CO, United States of America

Steven E Hill