Entegris, Inc.

Advanced Technology Materials, Inc.

Steven E Bishop

Robert E Kaim

Frank DiMeo, Jr

James A Dietz

W Karl Olander

Joseph D Sweeney

James V McManus

Ying Tang

Michael J Wodjenski

Sharad N Yedave

Steven M Lurcott

Jose I Arno

Oleg Byl

Jeffrey W Neuner

David James Eldridge

Gregory T Stauf

Barry Lewis Chambers

Paul J Marganski

Lin Feng

Oleg Bly

Karl W Olander

Steven Sergi

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate. Preferably, in a gas hazard event, the shell exhaust discharge from the housing is also terminated, to facilitate exhausting all gas within the housing, outside as well as inside the gas box, to the treatment unit.

Ion implanter comprising integrated ventilation system

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

Ion source cleaning in semiconductor processing systems

A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor and display operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel

A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.

Cleaning of semiconductor processing systems

A monitoring system () for monitoring fluid in a fluid supply vessel () during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors () for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module () operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor () and display () operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.

Methods for cleaning ion implanter components

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Corrales, NM, United States of America

Steven E Bishop