Applied Materials, Inc.

Other

Steven E Babayan

Andreas Schmid

Yogananda Sarode Vishwanath

Stephen Donald Prouty

Phillip A Criminale

Zhiqiang Guo

Vijay D Parkhe

Phillip R Sommer

Dan A Marohl

Konstantin Makhratchev

Denis M Koosau

Michael Robert Rice

Rajinder Dhindsa

Jeffrey C Hudgens

Timothy Joseph Franklin

Leon Volfovski

Douglas R McAllister

Helder T Lee

Nicholas Michael Kopec

Andrew Antoine Noujaim

Philip Allan Kraus

Damon Keith Cox

Chunlei Zhang

Olivier Luere

Upendra V Ummethala

Lei Lian

Imad Yousif

Sunil Srinivasan

Chuang-Chia Lin

David Ullstrom

Jennifer Y Sun

James Rogers

Ming Xu

Anwar Husain

Sushant Suresh Koshti

Xue Chang

Alvaro Garcia De Gorordo

Carlaton Wong

Andrew Myles

Alexander Sulyman

Álvaro García De Gorordo

Shih-Ying Huang

Anthony Huang

A substrate carrier is described with an array of independently controllable heater elements. In one example an apparatus includes a substrate carrier to carry a substrate for processing, a plurality of resistive heating elements in the carrier to heat the substrate by heating the carrier, a power supply to supply power to the heating elements, a power controller to provide a control signal, the control signal to control an amount of current applied to each of the heating elements, and a plurality of power interfaces in the carrier each coupled to a heating element to receive the power from the power supply and the control signal from the controller and to modulate the power applied to a respective coupled heating element in response to the control signal.

Substrate carrier with array of independently controllable heater elements

Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

Tunable temperature controlled substrate support assembly

Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

Lift pin mechanism

A process kit enclosure system includes surfaces to enclose an interior volume, a first support structure including first fins, a second support structure including second fins, and a front interface to interface the process kit enclosure system with a load port of a wafer processing system. The first and second fins are sized and spaced to hold process kit ring carriers and process kit rings in the interior volume. Each of the process kit rings is secured to one of the process kit ring carriers. The process kit enclosure system enables first automated transfer of a first process kit ring carrier securing a first process kit ring from the process kit enclosure system into the wafer processing system and second automated transfer of a second process kit ring carrier securing a second process kit ring from the wafer processing system into the process kit enclosure system.

Process kit enclosure system

Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Wafer edge ring lifting solution

Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

In-situ apparatus for semiconductor process module

A process kit ring adaptor includes one or more upper surfaces and one or more lower surfaces. The one or more upper surfaces are configured to support a process kit ring. The one or more lower surfaces are configured to interface with an end effector. The process kit ring adaptor supporting the process kit ring is configured to be transported on the end effector within a processing system.

Process kit ring adaptor

Embodiments disclosed herein include optical sensor systems and methods of using such systems. In an embodiment, the optical sensor system comprises a housing and an optical path through the housing. In an embodiment, the optical path comprises a first end and a second end. In an embodiment a reflector is at the first end of the optical path, and a lens is between the reflector and the second end of the optical path. In an embodiment, the optical sensor further comprises an opening through the housing between the lens and the reflector.

In-situ optical chamber surface and process sensor

Examples disclosed herein are directed to a method and apparatus for determining a position of a ring within a process kit. In one example, a sensor assembly for a substrate processing chamber is provided. The sensor assembly includes a housing having a top surface, a bottom surface opposite the top surface, and a plurality of sidewalls connecting the top surface to the bottom surface. The housing also has a recess in the top surface, the recess forming an interior volume within the housing. The sensory assembly includes a bias member, and a contact member disposed on the bias member. The bias member and contact member are disposed within the recess. A sensor is configured to detect a displacement of the contact member. The displacement of the contact member corresponds to a relative position of an edge ring.

Method and apparatus for determining a position of a ring within a process kit

Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

Azimuthally tunable multi-zone electrostatic chuck

Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

Semiconductor processing with cooled electrostatic chuck

Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.

Thermal repeatability and in-situ showerhead temperature monitoring

Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.

Cryogenic electrostatic chuck

Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.

Growing community of inventors

Los Altos, CA, United States of America

Steven E Babayan