Hewlett-packard Development Company, L.p.

Battelle Memorial Institute

Other

Steven David Leith

Robert S Wegeng

Robert A Dagle

Paul H Humble

Jeffrey Scott Obert

Daniel R Palo

Shankar Krishnan

Eric Lee Nikkel

Martha A Truninger

Kenneth Michael Kramer

Charles Craig Haluzak

Timothy R Emery

Jeffery S Hess

George Z Radominski

Paul H McClelland

Timothy L Weber

Donald W Schulte

Niranjan Thirukkovalur

William J Edwards

Thomas H Ottenheimer

David L Neiman

A solar thermochemical processing system is disclosed. The system includes a first unit operation for receiving concentrated solar energy. Heat from the solar energy is used to drive the first unit operation. The first unit operation also receives a first set of reactants and produces a first set of products. A second unit operation receives the first set of products from the first unit operation and produces a second set of products. A third unit operation receives heat from the second unit operation to produce a portion of the first set of reactants.

Solar thermochemical processing system and method

A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Methods for controlling feature dimensions in crystalline substrates

A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, filling the trench with a fill material, forming a first portion of the opening in the substrate from the second side of the substrate toward the mask layer, and forming a second portion of the opening in the substrate through the mask layer and the fill material, including communicating the second portion of the opening with the first portion of the opening and the first side of the substrate.

Flextensional transducer and method of forming flextensional transducer

The described embodiments relate to fluid-ejection devices and methods of forming same. One exemplary embodiment includes a plurality of fluid drop generators and associated electrically conductive paths, and at least one electron beam generation assembly configured to selectively direct at least one electron beam at individual electrically conductive paths sufficiently to cause fluid to be ejected from an associated fluid drop generator.

Fluid-ejection device and methods of forming same

A memory apparatus has a plurality of first electrodes and at least one second electrode separated by an electrolyte solution. Information may be recorded by causing an electrical current to flow between a selected of the first electrodes and the second electrode to deposit an electrochemically active material on one of the selected first or the second electrodes. A method for recording and reading information has steps of writing the information by causing a current to flow between a first and a second electrode through an electrolyte solution to cause an electrochemically active material to electrodeposit, and reading the information by sensing the deposited material with a sensor.

Memory for storing information

A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced stops in the first side of the substrate, partially forming a first portion of the opening in the substrate from the second side by a first process, further forming the first portion of the opening in the substrate from the second side by a second process, including forming the first portion of the opening to the spaced stops, and forming a second portion of the opening in the substrate from the first side, including forming the second portion of the opening between the spaced stops.

Substrate and method of forming substrate for fluid ejection device

An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Emission device and method for forming

A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.

Slotted substrate and slotting process

A through-substrate etching process is monitored by providing a sacrificial electrode in proximity to a desired etch window on the substrate. An etch process is performed on the substrate. The etch process is monitored by measuring an electrical property of either the substrate or the sacrificial electrode or both.

Growing community of inventors

Albany, OR, United States of America

Steven David Leith