Materials Research Corporation

Sony Corporation

Tokyo Electron Limited

Other

Fresh Creek Technologies, Inc.

Read Rite Corporation

Marerials Research Corporation

Tokyo Electron Limited of Ibs Broadcast Center

Israel Wagner

Steven D. Hurwitt

Charles N. Van Nutt

Robert G. Hieronymi

Steven D Hurwitt

Robert G Hieronymi

Walter H Class

Charles Van Nutt

Ira Reiss

Michael L Hill

Arnold J Aronson

Frank M Shinneman

Tugrul Yasar

Swie-In Tan

Thomas J Licata

Vaclav Jelinek

Richard R Turner, Jr

Daniel R Marx

Marian Zielinski

Richard C Edwards

Bhola N De

Miroslav Eror

Jon S Hsu

Richard E Biehl

Marvin K Hutt

Julian Hodos

Donald A Messina

Andrew Barada

Corey Weiss

George J Unterkofler

Lin I

Charles N Van Nutt

A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferably reusable cooling jacket that seals to the rear face of the target unit and encloses a cooling cavity therebetween. Ducts are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face, and has a recessed rim surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid. A central connection, preferably in the form of a projecting hub, is centered at the target unit back and connects to a shaft in the cathode assembly to support the target material against distortion from pressure and heat variances, generally tending to force the center of the target into the processing chamber. Preferably, the target is formed of an integral piece of sputtering material, where the material permits, and otherwise the rim and hub may be part of a backing plate bonded to the target material to form the target unit. In either event, the back of the target unit is intrinsically, or is coated or otherwise treated to be, impermeable to contamination from the cooling water.

Sputtering apparatus with isolated coolant and sputtering target therefor

Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Method and apparatus for sputter coating with variable target to substrate spacing

A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement. This enables adjustment of a dwell time of the magnetic field over predetermined portions of the target to change the shape of the plasma and thus change the erosion pattern of the target.

Cathode having variable magnet configuration

An apparatus and method for compensating the process-related asymmetries produced in physical vapor processing of a surface. The apparatus and method may be used on either a substrate when sputtering material from a source or when using an ionized physical vapor deposition (IPVD) apparatus to either deposit a film onto or remove material from a substrate. A compensating magnet is configured and positioned to produce a compensating magnetic field. The compensating magnetic is positioned to offset the effects of chamber and process-related asymmetries, particularly those that affect the distribution of plasma processing on a substrate where the plasma has been otherwise symmetrically produced. Assymetries about an axis of the substrate, for example, are corrected, in, for example, systems such as sputter coating machines where a rotating magnet cathode or other such technique produces an initially symmetrical plasma. Asymmetrical non-uniformities in deposited films are reduced to an acceptable amount and substrates may be cleaned in situ prior to metallization.

Physical vapor processing of a surface with non-uniformity compensation

A substrate support platform has a substrate engaging surface which defines a first channel for introducing and distributing a thermal transfer gas to a first region of the engaging surface, and a second channel, nonintersecting with the first channel, for introducing and distributing a thermal transfer gas to a second region of the engaging surface. A gas delivery system is independently connected between a gas source and the first and second channels, for independently providing (via valved connections) a thermal transfer gas to the first and second channels, so that gas delivery may be limited to one of the channels, or gas may be delivered to both of the channels in case a substrate is placed over either or both of the associated regions. A pressure measuring device is independently coupled to each of the channels via measuring ports, permitting measurement and control of gas pressure from the gas source.

Apparatus for thermal control of variously sized articles in vacuum

An apparatus is disclosed for clamping a substrate or wafer with a predetermined force during a sputtering process for maintaining a minimal gap between the wafer and a backplane in order to provide a uniform temperature distribution on the wafer. The apparatus includes a first suspension system which includes a diaphragm having a plurality of spring sections positioned in contact with an outer peripheral area of an upper surface of the wafer. The spring sections are positioned immediately adjacent to each other to provide substantially continuous and uniform loading of the outer periphery in order to eliminate edge gaps. The apparatus further includes a second suspension system which includes a mounting ring having a plurality of springs each of which are secured to a fixed element. The first and second suspension systems are configured such that approximately 80 to 90% of the total spring deflection is provided by the second suspension system whereas the remaining 10 to 20% of the total spring deflection is provided by the first suspension system.

Apparatus and method for clamping a substrate

A composite backing plate (34) for a backing plate-target assembly (41) having a core of structural material (36) with a front face (42) and/or a rear face (44) of a different material laminated thereto. The composite backing plate (35) has the desired mechanical properties of a solid copper backing plate, for example, strength and stiffness, but is preferably less than half the density of a solid copper backing plate. The core material is preferably aluminum; the front face is preferably copper; and the rear face is preferably either copper or an organic material.

Composite backing plate for a sputtering target

A method for forming a magnetically oriented thin film on a substrate is disclosed wherein deposition pulses are alternated with magnetic field pulses. In particular, the method includes sputtering a target to deposit a first incremental layer of target material on the substrate, wherein the target is sputtered for a first sputtering time period and the first incremental layer includes randomly oriented first domains. The method further includes generating a magnetic field for orienting the first in a desired direction, wherein the magnetic field is generated for a first magnetic field time period which begins after the first sputtering time period ends. In addition, the method includes sputtering the target to deposit a second incremental layer of target material upon the first incremental layer; wherein the target is sputtered for a second sputtering time period which begins after the first magnetic field time period ends and the second incremental layer includes randomly oriented second domains. The magnetic field is then generated which orients the second domains in the desired direction, the magnetic field being generated for a second magnetic field time period which begins after the second sputtering time period ends. The steps of sputtering the target and generating the magnetic field are then repeated to form successive incremental layers each having associated domains which are oriented in the desired direction by the magnetic field to form a thin film on the substrate whose domains are oriented in the desired direction.

Method and apparatus for forming a magnetically oriented thin film

A device for rotating a substrate in a complex motion within a chamber which during a sputtering process. The device includes a first support element positioned within the chamber. The first support element includes a first rotating structure which is affixed between a platform for supporting the substrate and a first magnet positioned adjacent to the inner wall surface. Further, the first rotating structure is adapted to rotate about a first axis. The device further includes a second support element positioned outside of the chamber. The second support element includes a second rotating structure affixed between a planet gear adapted for engagement with a sun gear outside of the chamber and a second magnet positioned adjacent the outer wall surface and spaced apart from the first magnet. This causes the formation of a magnetic bond between the first and second magnets. Further, the second rotating structure is adapted to rotate about the first axis thereby enabling the first and second rotating structures to rotate in unison about the first axis. In addition, the device includes a drive element affixed to the first and second support elements, wherein rotation of the drive element causes a first rotation of the first and second rotating elements and thus the substrate about a center axis. This also causes a second rotation wherein the engagement of the sun gear and the planet gear causes simultaneous rotation of the substrate about the first axis.

Magnetic device for rotating a substrate

A sputtering apparatus for forming a thin film on a substrate is disclosed. The sputtering apparatus includes a target for providing target material for forming the thin film, wherein the target includes a first area. The sputtering apparatus further includes a plasma discharge to enable removal of target material from the target. In addition, a main magnet is provided for generating a main magnetic field for controlling the plasma discharge to remove the target material. Further, a compensating magnet is utilized which is positioned adjacent to the first area. The compensating magnet generates a compensating magnetic field which interacts with the main magnetic field to control the plasma discharge in the first area to form a desired erosion pattern in the first area and enable formation of a substantially uniform film thickness on the substrate.

Sputtering cathode with uniformity compensation

A sputtering target is pretextured, prior to being subjected to the initial sputter precleaning and use in a sputter processing apparatus, by artificially roughening the sputtering surface of the target to produce a texture which functions, when used in the sputter coating of substrates, in a manner equivalent to the surface of a target roughened by an hour or more of a sputter burn-in process. The surface is textured by the machining of grooves or other irregular microstructure therein, by chemical etching, by mechanical abrading, or by another means other than sputter processing. A 0.05 to 3.0 millimeter texture size such as achieved with annular V-grooves 0.025 inches deep and spaced at 0.0625 inches is preferred.

Method of pretexturing a cathode sputtering target and sputter coating

A system for sputtering a substrate is disclosed. The system includes a central housing having at least one process module for forming the layer, wherein the process module is in fluid communication with the central housing and includes a first device used in conjunction with forming the layer on the substrate. In addition, the system includes at least one service module in fluid communication with the central housing, wherein the service module includes at least one replacement device suitable for replacing the first device. The central housing includes a robotic element for transporting the first device from the process module to the service module and for transporting the replacement device from the service module to the process module in order to replace the first device. In addition, the service module includes a dedicated pump for evacuating the service module to a high vacuum in order to reduce surface outgassing of the replacement device to a desired level before use.

Sputtering apparatus having an on board service module

Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target and a cooling surface in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid onto the cooling surface to conductively remove heat from the sputtering target, allowing at least a portion of the cooling liquid to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target. The apparatus comprises a cooling surface in operable conductive heat transfer contact with the sputtering target to conductively remove heat from the target when a cooling liquid is introduced onto the cooling surface, and means for allowing at least a portion of the cooling liquid to change phase into a vapor while preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target.

Method and apparatus for cooling a sputtering target

Apparatus for trapping and collecting debris including an in-line trap contained in a subterranean chamber having an inlet and an outlet for connection to an underground conduit such as a sewer or storm drain conduit. The trap comprises a net being closed on all sides except on an inlet side which faces the inlet to the chamber. The chamber is contained in a vault having a set of upper doors and the bag is attached to a frame structure having suitable supports which may be grasped such that the bag may be lifted upwardly through the doors for replacement. An overflow weir is provided for allow flow past the trap when the bag is full of debris. Sensing systems are further provided for detecting and signalling when the bag is full. A multi-bag system is also disclosed in which at least two bags in parallel are provided such that one bag may accommodate overflow when the other is being serviced.

Growing community of inventors

Park Ridge, NJ, United States of America

Steven D Hurwitt