International Business Machines Corporation

Steven D Flanders

Harold G Linde

Thomas Benjamin Faure

James P Levin

Jeffrey F Shepard

Timothy E Neary

David S O'Grady

Dennis M Hayden

Joseph L Malenfant, Jr

Lyndon S Gibbs

The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.

Tapered ion implantation with femtosecond laser ablation to remove printable alternating phase shift features

A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).

Single component developer for use with ghost exposure

Single component developer for copolymer resists

An attenuating, phase-shift, semiconductor fabrication mask having recessed attenuating and phase-shifting regions that is not susceptible to phase defects in the printing regions of the mask. This desirable result is accomplished by not altering the surface of the fully transmissive regions of the mask and by recessing the attenuating regions of the mask relative to the fully transmissive regions. A method of forming the recessed attenuated phase-shift mask is also included. The process begins by forming recesses in the regions of the mask substrate where phase-shifting is desired and back filling these recessed regions with a selected thickness of attenuating material so that the attenuation effect of the deposited material together with the depth of the recess co-act to shift the light approximately 180.degree. (.pi. radians) from the light transmitted through the adjacent transmissive regions of the mask to create by destructive interference a sharp delineation at the edges of the projected mask image.

Attenuating phase-shift mask structure and fabrication method

Growing community of inventors

Colchester, VT, United States of America

Steven D Flanders