Skyworks Solutions, Inc.

Other

Steven Christopher Sprinkle

Dima Prikhodko

Gene A Tkachenko

Sergey Nabokin

Paul T DiCarlo

Richard A Carter

Florinel G Balteanu

Boshi Jin

Jason Chiesa

Yu Zhu

Mikhail Shirokov

David Scott Whitefield

Dylan Charles Bartle

Jerod F Mason

Oleksiy Klimashov

Steven P Matte

John Pessia

Fikret Altunkilic

Haki Cebi

Jing-Hwa Chen

Beverly A Peluso

Oleksey Klimashov

Guillaume Alexandre Blin

Nuttapong Srirattana

Hanching Fuh

Anuj Madan

Jong-Hoon Lee

Chuming Shih

Atiqul Baree

George Nohra

Mengshu Hsu

A linearization circuit that reduces intermodulation distortion in an amplifier output receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency. The linearization circuit generates an envelope signal based at least in part on a power level of the first signal and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal and the adjusted signal at a second terminal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation products that result from the intermodulation of the first frequency and the second frequency.

Amplifier linearization in a radio frequency system

A power amplifier can include a carrier amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a carrier transformer, and a peaking amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a peaking transformer. The power amplifier can further include a combiner having a quarter-wave circuit implemented between the secondary loop of the carrier transformer and a secondary loop of the peaking transformer. The quarter-wave circuit can be configured to provide a characteristic impedance, such that the carrier and peaking amplifiers are presented with an impedance that is approximately the same as the characteristic impedance when both of the carrier and peaking amplifiers are turned on, and the carrier amplifier is presented with an impedance that is approximately twice the characteristic impedance when the carrier amplifier is turned on and the peaking amplifier is turned off.

Doherty power amplifier for radio-frequency applications

A switching method and apparatus that provides high isolation between circuit arms of a mobile communication device by attenuating noise over a defined frequency range using a switched shunt LC notch filter.

High isolation switch with notch filter

Disclosed herein are power amplification (PA) systems configured to amplify a signal, such as a radio-frequency signal. The PA system includes a plurality of power amplifiers that are configured to amplify a signal received at a signal input and to output the amplified signal at a signal output. The power amplifiers are configured to receive a supply voltage that is a combination of a battery voltage and an envelope tracking signal. The PA system includes a PA controller configured to control the power amplifiers based at least in part on the battery voltage or a power output of the power amplifiers. The PA controller can be configured to alter impedance matching components of the PA system to reconfigure a load line of the power amplifiers.

Power amplification system with programmable load line

Transformer-based Doherty power amplifier (PA). In some embodiments, a Doherty PA can include a carrier amplification path having an output that includes a carrier transformer, and a peaking amplification path having an output that includes a peaking transformer. The Doherty PA can further include a combiner configured to combine the outputs of the carrier and peaking amplification paths into an output node. The combiner can include a quarter-wave circuit implemented between the carrier and peaking transformers.

Transformer-based doherty power amplifier

Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

Radio-frequency switches having gate bias and frequency-tuned body bias

Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches

A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.

Compact switch with enhanced linearity performance

A system for detecting power output of a power amplifier includes a first power detector configured to detect a forward power output of a power amplifier, the first power detector configured to provide a first power detector output, and a second power detector configured to receive a collector parameter signal and detect a collector parameter therefrom, the second power detector also configured to provide a second power detector output.

System and method for power detection in a power amplifier

Compact low loss high frequency switch with improved linearity performance

According to one exemplary embodiment, a switching module includes a first harmonic phase tuning filter coupled to a first input of an RF switch. The first harmonic phase tuning filter is configured to provide an output impedance that substantially matches an input impedance of the RF switch at approximately a fundamental frequency and to provide a high impedance at approximately a harmonic frequency generated by the RF switch. The first harmonic phase tuning filter includes an LC circuit coupled between input and output terminals of the first harmonic phase tuning filter and tuned to provide the high impedance at approximately the harmonic frequency generated by the RF switch. The RF switching module further includes a second harmonic phase tuning filter coupled to a second input of the RF switch. The first and second harmonic phase tuning filters can be fabricated on a single semiconductor die.

Switching module with harmonic phase tuning filter

According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first phase shifter in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The switching device may further include a number of FETs coupled in series between an output of the switching device and the first and second phase shifting switching branches.

Switching device with reduced intermodulation distortion

Growing community of inventors

Hampstead, NH, United States of America

Steven Christopher Sprinkle